D. Pogaku

Investigation of incorporating dielectric pocket (DP) on Vertical Strained-SiGe Impact Ionization MOSFET (VESIMOS-DP)

U. Hashim, R. Ismail, I. Saad, 2012, International Conference on Software Engineering.

Effects of S/D doping concentrations on strained SiGe vertical I-MOS characteristics

Ismail Saad, Divya Pogaku, I. Saad, 2011, 2011 3rd International Conference on Electronics Computer Technology.