J. Pezoldt

发表

High Quality Graphene Grown by Sublimation on 4H-SiC (0001)

E. V. Gushchina, A. Lebedev, V. Davydov, 2018, Semiconductors.

Cubic AlGaN/GaN Hetero-Field Effect Transistors with Normally On and Normally Off Operation

F. Schwierz, R. Granzner, D. As, 2009 .

Rapid Thermal Annealing of Thin ZnO Films

T. Stauden, L. Spiess, J. Pezoldt, 1994 .

Engineering of III-Nitride Semiconductors on Low Temperature Co-fired Ceramics

H. Bartsch, E. Blanco, B. Lacroix, 2018, Scientific Reports.

Metamorphic Stretchable Touchpad

Shantonu Biswas, H. Jacobs, T. Stauden, 2019, Advanced Materials Technologies.

3D Metamorphic Stretchable Microphone Arrays

Shantonu Biswas, H. Jacobs, T. Stauden, 2017 .

Vertical design of cubic GaN-based high electron mobility transistors

F. Schwierz, R. Granzner, M. Kittler, 2011 .

Integrated multilayer stretchable printed circuit boards paving the way for deformable active matrix

Yufei Hao, Shantonu Biswas, H. Jacobs, 2019, Nature Communications.

Growth of non-polar a -plane and cubic InN on r -plane sapphire by molecular beam epitaxy

O. Ambacher, L. Eastman, W. Schaff, 2003 .

Smooth ceramic titanium nitride contacts on AlGaN/GaN-heterostructures

T. Stauden, K. Tonisch, G. Ecke, 2012 .

Metamorphic hemispherical microphone array for three-dimensional acoustics

Shantonu Biswas, H. Jacobs, T. Stauden, 2017 .

Gas Phase Electrodeposition Enabling the Programmable Three-Dimensional Growth of Multimodal Room Temperature Nano-Bridge Gas Sensor Array.

H. Jacobs, T. Stauden, J. Pezoldt, 2019, ACS applied materials & interfaces.

Polytype patterning in epitaxial layers on the basis of non-equilibrium phase transitions

J. Pezoldt, A. A. Kalnin, F. Neubert, 1994 .

Reconstruction of concentration profiles in heterostructures with chemically modified interfaces

H. Romanus, M. Lubov, J. Pezoldt, 2018, Journal of Applied Physics.

Buried melting in germanium implanted silicon by millisecond flash lamp annealing

M. Voelskow, W. Skorupa, R. Yankov, 2008 .

Theoretical and experimental investigations of defect evolution in silicon carbide during N+ and Al+ ion implantation taking into account internal stress fields

M. Voelskow, R. Yankov, R. Yankov, 2001 .

The deposition of aluminum nitride on silicon by plasma-enhanced metal-organic chemical vapour deposition

V. Cimalla, G. Ecke, T. Stauden, 1996 .

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

O. Ambacher, J. Pezoldt, V. Cimalla, 2007 .

Characterization of Buffer Layers for SiC CVD

V. Cimalla, G. Ecke, J. Pezoldt, 1995 .

Structural and local electronic properties of clean and Li-intercalated graphene on SiC(0001)

Y. Lei, E. Manske, J. Kröger, 2020 .

α-SiC–β-SiC heteropolytype structures on Si (111)

O. Ambacher, F. M. Morales, J. Pezoldt, 2005 .

SiC polytypes process affected by Ge predeposition on Si(111) substrates

P. Masri, M. Kazan, J. Pezoldt, 2008 .

Micro-electromechanical systems based on 3C-SiC/Si heterostructures

Matthias Hein, Oliver Ambacher, Volker Cimalla, 2005 .

Properties of surface and interface structure of AlN/3C–SiC/Ge/Si (1 1 1) heterostructure

P. Masri, M. Kazan, J. Pezoldt, 2009 .

Study of Si and C adatoms and SiC clusters on the silicon surface by the molecular dynamics method

E. E. Zhurkin, M. Lubov, J. Pezoldt, 2008 .

Investigation of the interface manipulation in SiC(100) on Si(100) with isovalent impurities

F. M. Morales, G. Ecke, P. Masri, 2006 .

Nucleation of SiC on Si and their relationship to nano-dot formation: I. Experimental investigations

Joerg Pezoldt, F. Scharmann, F. Scharmann, 2002, Other Conferences.

Critical island size of the SiC formation on Si(1 0 0) and Si(1 1 1)

J. Lindner, F. Scharmann, J. Pezoldt, 2002 .

Chemical conversion of Si to SiC by solid source MBE and RTCVD

V. Cimalla, G. Ecke, D. Schipanski, 1997 .

The role of Ge predeposition temperature in the MBE epitaxy of SiC on Ssilicon

O. Ambacher, A. Sanz-Hervás, F. M. Morales, 2004 .

Linear alignment of SiC dots on silicon substrates

O. Ambacher, V. Cimalla, K. Zekentes, 2004 .

Lateral alignment of SiC dots on Si

O. Ambacher, V. Cimalla, K. Zekentes, 2004 .

Influence of the growth temperature on SiC nanocluster nucleation on Si(111) surface during MBE process

K. L. Safonov, Dmitri V. Kulikov, Yuri V. Trushin, 2003, Other Conferences.

Simulation of quality of SiC/Si interface during MBE deposition of C on Si

F. M. Morales, T. Stauden, J. Pezoldt, 2006 .

SIMS investigation of the influence of Ge pre‐deposition on the interface quality between SiC and Si

O. Ambacher, F. M. Morales, G. Ecke, 2004 .

Auger depth profiling of thin SiC layers: practical aspects for a better understanding of quantitative analysis

Ralf Pieterwas, Joerg Pezoldt, Rastislav Kosiba, 2000, Other Conferences.

5 μm thick 3C-SiC layers grown on Ge-modified Si(100) substrates

G. Ferro, P. Masri, J. Pezoldt, 2006 .

Kinetic Monte Carlo simulation of SiC nucleation on Si(111)

O. Ambacher, V. Cimalla, A. Schmidt, 2004 .

Real time spectroscopic ellipsometry monitoring of the SiC growth during the interaction process of elemental carbon with Si surfaces

J. Schaefer, V. Cimalla, T. Stauden, 2000 .

A growth model for the carbonization of silicon surfaces

V. Cimalla, J. Pezoldt, G. Eichhorn, 1997 .

Analysis of Reflection High Energy Electron Diffraction Pattern of Silicon Carbide Grown on Silicon

V. Cimalla, L. Spiess, J. Pezoldt, 1995 .

(AlN)x(SiC)1−x buried layers implanted in 6H–SiC: a theoretical study of their optimized composition

W. Skorupa, P. Masri, R. Yankov, 2001 .

Localized Collection of Airborne Analytes: A Transport Driven Approach to Improve the Response Time of Existing Gas Sensor Designs including SERS based Detection of Small Molecules

H. Jacobs, T. Stauden, J. Pezoldt, 2015 .

Effective Collection and Detection of Airborne Species Using SERS-Based Detection and Localized Electrodynamic Precipitation

H. Jacobs, T. Stauden, J. Pezoldt, 2013, Advanced materials.

Nucleation of SiC on Si and their relationship to nano-dot formation: II. Theoretical investigation

K. L. Safonov, Dmitri V. Kulikov, Yuri V. Trushin, 2002, Other Conferences.

Deposition of aluminium nitride films by electron cyclotron resonance plasma-enhanced chemical vapour deposition

G. Ecke, T. Stauden, J. Pezoldt, 1998 .

Micro‐ and nano‐electromechanical resonators based on SiC and group III‐nitrides for sensor applications

Oliver Ambacher, Volker Cimalla, Ralf Stephan, 2011 .

Nanoparticle gas phase electrodeposition: Fundamentals, fluid dynamics, and deposition kinetics

A. Bund, A. Ispas, H. Jacobs, 2021 .

Corona Discharge Assisted Growth Morphology Switching of Tin-Doped Gallium Oxide for Optical Gas Sensing Applications

G. Ecke, H. Jacobs, T. Stauden, 2019, Crystal Growth & Design.

Investigation of Ge and C layer deposition on a Si substrate using SIMS profiling

T. Stauden, J. Pezoldt, Y. Trushin, 2010 .

High-temperature high-dose implantation of N+ and Al+ ions in 6H-SiC

M. Voelskow, W. Skorupa, R. Yankov, 1997 .