Jae-Ho Min

发表

Oblique-Directional Plasma Etching of Si Using a Faraday Cage

I. Jang, S. Moon, Chang-Koo Kim, 2009 .

Angular Dependence of Etch Rate of a Silsesquioxane-Based Low Dielectric Constant Material in Fluorocarbon Plasmas

S. Moon, Gyeo-Re Lee, Sung-Wook Hwang, 2003 .

Effect of ion energy and incident angle on the modification of a porous low dielectric-constant material in an O2 plasma ashing process

S. Moon, Gyeo-Re Lee, Sung-Wook Hwang, 2003 .

Surface Properties of Low-k Hybrid-Organic-Siloxane-Polymer (HOSP) Films Etched with Ions of Different Incident Angles in CHF 3 Plasma

S. Moon, Gyeo-Re Lee, Sung-Wook Hwang, 2002 .

Comparison of atomic scale etching of poly-Si in inductively coupled Ar and He plasmas

C. Shin, S. Moon, Chang-Koo Kim, 2007 .

Dependences of bottom and sidewall etch rates on bias voltage and source power during the etching of poly-Si and fluorocarbon polymer using SF6, C4F8, and O2 plasmas

S. Moon, Chang-Koo Kim, Jin-Kwan Lee, 2004 .

Redeposition of etch products on sidewalls during SiO2 etching in a fluorocarbon plasma. I. Effect of particle emission from the bottom surface in a CF4 plasma

S. Moon, Gyeo-Re Lee, Sung-Wook Hwang, 2002 .

Etch Characteristics of Silsesquioxane-based Low Dielectric Constant Material in Fluorocarbon Plasma

S. Moon, Gyeo-Re Lee, Sung-Wook Hwang, 2002 .

Angular distribution of particles sputtered from Si bottom in a CHF3 plasma

S. Moon, Jin-Kwan Lee, Gyeo-Re Lee, 2006 .

Effect of sidewall roughness on the bottom etch properties of an SiO2 trench produced in a CF4 plasma

S. Moon, Gyeo-Re Lee, Sung-Wook Hwang, 2004 .

Redeposition of etch products on sidewalls during SiO2 etching in a fluorocarbon plasma. V. Effects of C∕F ratio in plasma gases

S. Moon, Jin-Kwan Lee, Gyeo-Re Lee, 2004 .

Redeposition of etch products on sidewalls during SiO2 etching in a fluorocarbon plasma. III. Effects of O2 addition to CF4 plasma

S. Moon, Gyeo-Re Lee, Sung-Wook Hwang, 2003 .

ESTIMATION OF THE BEHAVIORS OF SELENIUM IN THE NEAR FIELD OF REPOSITORY

Seung-Soo Kim, Jongwon Choi, M. Baik, 2012 .

Thermal Cyclization Behavior of Polyhydroxyamide Copolymers

Min Woo Nam, Min Ho Jee, Doo Hyun Baik, 2016 .

Angular dependence of Si3N4 etch rates and the etch selectivity of SiO2 to Si3N4 at different bias voltages in a high-density C4F8 plasma

S. Moon, Jin-Kwan Lee, Gyeo-Re Lee, 2007 .

Contribution of bottom-emitted radicals to the deposition of a film on the SiO2 sidewall during CHF3 plasma etching

S. Moon, Jin-Kwan Lee, Gyeo-Re Lee, 2005 .

Characteristics of secondary etching of SiO2 by ions reflected from a primary SiO2 target in a CHF3 plasma

S. Moon, Gyeo-Re Lee, Sung-Wook Hwang, 2003 .

Effect of sidewall properties on the bottom microtrench during SiO2 etching in a CF4 plasma

S. Moon, Chang-Koo Kim, Jin-Kwan Lee, 2005 .

Interactive relationships between sidewall and bottom etch rates, as-affected by sidewall angle, during SiO2 etching in a CHF3 plasma

S. Moon, Chang-Koo Kim, Jin-Kwan Lee, 2006 .

Redeposition of etch products on sidewalls during SiO2 etching in a fluorocarbon plasma. IV. Effects of substrate temperature in a CF4 plasma

S. Moon, Gyeo-Re Lee, Sung-Wook Hwang, 2003 .

Dependence of SiO2 etch rate on sidewall angle as affected by bottom materials in a high-density CHF3 plasma

S. Moon, Jin-Kwan Lee, Gyeo-Re Lee, 2006 .

Deep etching of silicon with smooth sidewalls by an improved gas-chopping process using a Faraday cage and a high bias voltage

Chang-Koo Kim, Sang Heup Moon, Jin-Kwan Lee, 2005 .

Redeposition of etch products on sidewalls during SiO2 etching in a fluorocarbon plasma. II. Effects of source power and bias voltage in a CF4 plasma

S. Moon, Gyeo-Re Lee, Sung-Wook Hwang, 2003 .

Angular dependence of SiO2 etch rate at various bias voltages in a high density CHF3 plasma

S. Moon, Gyeo-Re Lee, Sung-Wook Hwang, 2002 .

Angular dependence of etch rates in the etching of poly-Si and fluorocarbon polymer using SF6, C4F8, and O2 plasmas

S. Moon, Chang-Koo Kim, Jin-Kwan Lee, 2004 .

Improvement of SiO2 pattern profiles etched in CF4 and SF6 plasmas by using a Faraday cage and neutral beams

S. Moon, Chang-Koo Kim, Jin-Kwan Lee, 2005 .

Thickness of a modified surface layer formed in a silsesquioxane-based low-k material during etching in a fluorocarbon plasma

S. Moon, Gyeo-Re Lee, Sung-Wook Hwang, 2003 .

Material characteristics of electrically tunable zirconium oxide thin films

Igor Levin, Jane P. Chang, Byeong-Ok Cho, 2003 .