M. Anikeeva

发表

In/GaN(0001)- ( 3 × 3 ) R 30 ° adsorbate structure as a template for embedded (In, Ga)N/GaN monolayers and short-period superlattices

H Germany, M. Albrecht, O. Brandt, 2017, 1701.04680.

Performance and reproducibility of 13C and 15N hyperpolarization using a cryogen-free DNP polarizer

J. Hövener, A. Pravdivtsev, M. Anikeeva, 2022, Scientific reports.

Dependence of indium content in monolayer-thick InGaN quantum wells on growth temperature in InxGa1-xN/In0.02Ga0.98N superlattices

M. Sawicka, M. Siekacz, P. Wolny, 2018, Journal of Applied Physics.

Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells

M. Albrecht, Zhizhong Chen, C. Freysoldt, 2018 .

In/GaN(0001)-$\boldsymbol{{\mathsf{\left(\!\sqrt{3}\times\!\sqrt{3}\right)\!R30^{\circ}}}}$ adsorbate structure as a template for embedded (In,Ga)N/GaN monolayers and short-period superlattices

M. Albrecht, O. Brandt, R. Calarco, 2017 .

Imaging Inflammation – From Whole Body Imaging to Cellular Resolution

J. Kolb, G. Hüttmann, Tuula Peñate Medina, 2021, Frontiers in Immunology.

Impact of the substrate lattice constant on the emission properties of InGaN/GaN short-period superlattices grown by plasma assisted MBE

M. Albrecht, E. Grzanka, C. Skierbiszewski, 2019, Superlattices and Microstructures.

Influence of strain on the indium incorporation in (0001) GaN

L. Lymperakis, M. Siekacz, P. Wolny, 2020 .

Role of hole confinement in the recombination properties of InGaN quantum structures

J. Tomm, R. Calarco, L. Lymperakis, 2019, Scientific Reports.