V. Kolomoets

发表

Strain‐induced nonlinear behavior of electron effective mass in degenerately doped n‐Si(P) under high uniaxial pressure X || [111]

E. Liarokapis, V. Shenderovskii, V. Baidakov, 2009 .

Correlated increase of ε2‐ and ε1‐conductivity energies under strain‐induced metal–insulator transition in n‐Ge(Sb)

S. Budzulyak, V. Machulin, A. Gorin, 2004 .

Metal‐Insulator Transition in Degenerately Doped Si and Ge under High Uniaxial Pressure

D. Tunstall, V. Shenderovskii, V. Baidakov, 1996 .

Thermal donors and radiation-induced defect states in transmutation doped gamma-irradiated silicon

S. Budzulyak, V. Kolomoets, V. M. Ermakov, 2001 .

The ionisation of impurity states of Sb in Ge, connected with L- and X-valleys of the conduction band

T. A. Kudykina, N. Grigor’ev, V. Baidakov, 1982 .

Piezothermoelectromotive Force of Elastically Deformed n-Ge in [111] Direction Considering the Phonon-Drag Effect

V. Kolomoets, P. Baranskii, I. Buda, 1975 .

Defect states in transmutation-doped γ-irradiated Cz-Si crystals under high uniaxial pressure

M. Yamada, E. Liarokapis, M. Fukuzawa, 2001 .

Application of high uniaxial strain methods for semiconductor parameter determination

V. Kolomoets, V. Ermakov, P. Nazarchuk, 2013 .

Breakdown of Impurity States of As and Sb in Germanium at Uniaxial Compression

T. A. Kudykina, N. Grigor’ev, V. Baidakov, 1984 .

The determination of the deformation potential constants in n‐germanium

V. Kolomoets, P. Baranskii, 1971 .

Investigation of the resistance and magnetoresistance in uniaxially stressed n-germanium

V. Kolomoets, P. Baranskii, 1970 .

Intervalley Scattering of Electrons in n-Si at T = 77 ÷ 450 K

V. Kolomoets, V. Ermakov, L. Panasyuk, 2013 .