S. Trott

Weak localization effects in n-type inversion layers of InSb grain boundaries under high hydrostatie pressure

W. Kraak, S. Trott, R. Herrmann, 1989 .

Modified Thomas-Fermi approximation a surprisingly good tool for the treatment of semiconductor layer structures including various two-dimensional systems

M. Trott, S. Trott, V. Nakov, 1993 .

Theory of self-consistency effects in the electronic structure of inversion layers in a perpendicular magnetic field

G. Gobsch, G. Paasch, S. Trott, 1989 .

Modelling of the electronic structure for an AlGaAs/GaAs/AlGaAs HFET with a δ-doping layer inside the quantum well

G. Gobsch, R. Goldhahn, S. Trott, 1993 .

Normalization, Orthogonality, and Completeness for the Finite Step Potential

M. Trott, C. Schnittler, S. Trott, 1989 .