T. Asel

发表

Direct observation of a two-dimensional hole gas at oxide interfaces

E. Tsymbal, C. Eom, M. Rzchowski, 2018, Nature Materials.

Tailoring the Electronic Structure of Covalently Functionalized Germanane via the Interplay of Ligand Strain and Electronegativity

Joshua E. Goldberger, Xiao Yang, Leonard J. Brillson, 2016 .

Direct correlation and strong reduction of native point defects and microwave dielectric loss in air-annealed (Ba,Sr)TiO3

S. W. Kirchoefer, L. Brillson, Adrian Podpirka, 2015 .

$\gamma$-phase Inclusions as Common Defects in Alloyed $\beta$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ and Doped $\beta$-Ga$_2$O$_3$ Films

D. Muller, D. Jena, H. Xing, 2020, 2012.00263.

Controlled Si doping of b -Ga 2 O 3 by molecular beam epitaxy

H. Xing, A. Neal, V. Protasenko, 2022 .

Optical signatures of deep level defects in Ga2O3

D. Look, L. Cao, S. Rajan, 2018, Applied Physics Letters.

Native point defect formation in flash sintered ZnO studied by depth-resolved cathodoluminescence spectroscopy

Jian Luo, L. Brillson, Yuanyao Zhang, 2016 .

Surface relaxation and rumpling of Sn-doped β−Ga2O3(010)

J. Boeckl, S. Mou, D. Dorsey, 2020, Physical Review B.

Topological Dirac semimetal Na3Bi films in the ultrathin limit via alternating layer molecular beam epitaxy

E. Johnston-Halperin, J. Gupta, L. Brillson, 2018, APL Materials.

Uniform large-area growth of nanotemplated high-quality monolayer MoS2

E. Johnston-Halperin, S. Fullerton‐Shirey, J. Gupta, 2017 .

Toward high voltage radio frequency devices in β-Ga2O3

Kyle J. Liddy, A. Islam, N. Moser, 2020, Applied Physics Letters.

Lateral β-Ga2O3 field effect transistors

Kyle J. Liddy, A. Neal, G. Jessen, 2019, Semiconductor Science and Technology.

Structural and electronic properties of Ga 2 O 3-Al 2 O 3 alloys

D. Look, R. Karim, S. Rajan, 2018 .

Identification of a functional point defect in SrTiO3

C. Eom, Hongwei Wang, Xifan Wu, 2018, Physical Review Materials.

Reduction of unintentional Si doping in β-Ga2O3 grown via plasma-assisted molecular beam epitaxy

A. Neal, S. Mou, T. Asel, 2020 .

Controlled Si doping of β-Ga2O3 by molecular beam epitaxy

H. Xing, A. Neal, V. Protasenko, 2022, Applied Physics Letters.

Near-nanoscale-resolved energy band structure of LaNiO3/La2/3Sr1/3MnO3/SrTiO3 heterostructures and their interfaces

P. Woodward, J. Hoffman, L. Brillson, 2015 .

High conductivity β-Ga2O3 formed by hot Si ion implantation

S. Dhar, R. Comes, T. Asel, 2022, Applied Physics Letters.

Influence of Surface Chemistry on Water Absorption in Functionalized Germanane

C. D'Andrea, W. Windl, J. Goldberger, 2020 .

Identification of Ge vacancies as electronic defects in methyl- and hydrogen-terminated germanane

W. Windl, J. Goldberger, D. McComb, 2018, Applied Physics Letters.

Direct observation of a two-dimensional hole gas at oxide interfaces

E. Tsymbal, C. Eom, M. Rzchowski, 2018, Nature Materials.

Investigation of Si incorporation in (010) β-Ga2O3 films grown by plasma-assisted MBE using diluted disilane as Si source and suboxide Ga2O precursor

A. Neal, E. Ahmadi, T. Asel, 2024, Applied Physics Letters.