N. Furukawa

发表

Electroluminescence properties of Eu‐doped GaN‐based red light‐emitting diode by OMVPE

Y. Fujiwara, Y. Terai, A. Nishikawa, 2010 .

Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection

Y. Fujiwara, Y. Terai, A. Nishikawa, 2009 .

Atmospheric pressure growth of Eu‐doped GaN by organometallic vapor phase epitaxy

Y. Fujiwara, Y. Terai, A. Nishikawa, 2011 .

Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy

Y. Fujiwara, Y. Terai, A. Nishikawa, 2010 .

Effect of growth temperature on Eu-doped GaN layers grown by organometallic vapor phase epitaxy

Y. Fujiwara, Y. Terai, A. Nishikawa, 2010 .

Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy

Y. Fujiwara, Y. Terai, A. Nishikawa, 2011 .

Electroluminescence Properties of Eu-doped GaN-based Light-emitting Diodes Grown by Organometallic Vapor Phase Epitaxy

Y. Fujiwara, Y. Terai, A. Nishikawa, 2011 .

Growth Temperature Dependence of Eu-Doped GaN Grown by Organometallic Vapor Phase Epitaxy

Y. Fujiwara, Y. Terai, A. Nishikawa, 2010 .

Non-equilibrium photoexcited carrier effects in a graphene-based Josephson junction

E. Watanabe, H. Takayanagi, D. Tsuya, 2016 .

Femtosecond real-time pump-probe imaging spectroscopy

Jun Takeda, J. Takeda, V. Kleiman, 2004 .

Femtosecond Real-Time Pump-Probe Imaging Spectroscopy Implemented on a Single Shot Basis

J. Takeda, N. Furukawa, A. Ishida, 2006 .

Direct visualization of transient absorption by real-time pump-probe imaging spectroscopy

J. Takeda, V. Kleiman, N. Furukawa, 2005 .

Phase retrapping effects on switching characteristic in intrinsic Josephson junctions

H. Kitano, N. Furukawa, D. Yamamoto, 2021 .