Vishal A. Tiwari

Analysis of Gate-Induced Drain Leakage Mechanisms in Silicon-Germanium Channel pFET

D. Nair, D. Jaeger, A. Scholze, 2014, IEEE Transactions on Electron Devices.

Floquet engineering of strongly driven excitons in monolayer tungsten disulfide

T. Heinz, Yuki Kobayashi, D. Reis, 2022, Nature Physics.

Effects of trap-assisted tunneling on gate-induced drain leakage in silicon–germanium channel p-type FET for scaled supply voltages

T. Hook, D. Nair, R. Divakaruni, 2016 .

Floquet theory and computational method for the optical absorption of laser-dressed solids

B. Gu, I. Franco, Vishal A. Tiwari, 2023, 2305.09808.

Floquet theory and computational method for the optical absorption of laser-dressed solids

B. Gu, I. Franco, Vishal A. Tiwari, 2023, Physical Review B.