T. Mele

发表

The effects of boron penetration on p/sup +/ polysilicon gated PMOS devices

James D. Hayden, James R. Pfiester, T. C. Mele, 1990 .

Integration of a Double Polysilican, Fully Self-Aligned Bipolar Transistor into a 0 .5p1 BiCMOS Technology for Fast 4MBit SRAMs

Hayden, Á., J., 2004 .

Integration of a double polysilicon, fully self-aligned bipolar transistor into a 0.5 mu m BiCMOS technology for fast 4 MBit SRAMs

Y. See, C. Lage, V. Kaushik, 1991, Proceedings of the 1991 Bipolar Circuits and Technology Meeting.

Use of screening and response surface experimental designs for development of a 0.5- mu m CMOS self-aligned titanium silicide process

R. E. Jones, T. C. Mele, R. Jones, 1991 .

KINETIC ANALYSIS OF SILICON OXIDATIONS IN THE THIN REGIME BY INCREMENTAL GROWTH

P. Kenkare, S. Ajuria, T. Mele, 1994 .

A cobalt salicide CMOS process with TiN-strapped polysilicon gates

M. Woo, B. Boeck, J. Pfiester, 1991, IEEE Electron Device Letters.

A high-performance half-micrometer generation CMOS technology for fast SRAMs

Bich-Yen Nguyen, Robert E. Jones, James D. Hayden, 1991 .

Integration of a double-polysilicon emitter-base self-aligned bipolar transistor into a 0.5- mu m BiCMOS technology for fast 4-Mb SRAM's

C. Lage, James D. Hayden, T. C. Mele, 1993 .

A high-performance 0.5- mu m BiCMOS technology for fast 4-Mb SRAMs

Asanga H. Perera, C. Lage, James D. Hayden, 1992 .

A High-Performance 0 . 5pm BiCMOS Technology for Fast 4Mb SRAM ’ s

Asaṅga, D. Burnett, F. Walczyk, 2004 .

The influence of fluorine on threshold voltage instabilities in p/sup +/ polysilicon gated p-channel MOSFETs

Hsing-Huang Tseng, James D. Hayden, James R. Pfiester, 1989, International Technical Digest on Electron Devices Meeting.

Electrical characteristics of thin gate implanted MOS channels grown by rapid thermal processing

J. Krusius, J. Nulman, J. Scarpulla, 1985, International Electron Devices Meeting.