K. Evans

The effect of silicon gate microstructure and gate oxide process on threshold voltage instabilities in p/sup +/-gate p-channel MOSFETs with fluorine incorporation

H. Tseng, J. Pfiester, P. Tobin, 1992 .

Correlation between interface nitrogen and the fixed charge in thermally nitrided silicon dioxide on silicon

M. Moore, J. N. Fordemwalt, L. Munukutla, 1990 .

Characterization of epitaxial SiGe thin films on Si: Analytical considerations

R. J. Graham, M. McCartney, R. Gregory, 1992 .

High-performance SiGe epitaxial base bipolar transistors produced by a reduced-pressure CVD reactor

E. de Fresart, K. Evans, M. Racanelli, 1993, IEEE Electron Device Letters.

The effect of silicon gate microstructure and gate oxide process on threshold voltage instabilities in BF2 implanted P+ gate p-channel MOSFETs

Hsing-Huang Tseng Hsing-Huang Tseng, P.J. Tobin, F.K. Baker, 1990, Digest of Technical Papers.1990 Symposium on VLSI Technology.

DC conduction through UHV deposited tellurium films

A. Ray, K. Evans, R. Swan, 1996 .