A. Gouyé

发表

Selective growth of tensily strained Si1-yCy films on patterned Si substrates

F. Hüe, O. Kermarrec, Y. Campidelli, 2009 .

Low-temperature RPCVD of Si, SiGe alloy, and Si1−yCy films on Si substrates using trisilane (Silcore®)

O. Kermarrec, Y. Campidelli, D. Bensahel, 2009 .

Interrupted self-organization of SiGe pyramids.

I. Berbezier, A. Ronda, Jean-Noël Aqua, 2013, Physical review letters.

Accommodation of SiGe strain on a universally compliant porous silicon substrate

I. Berbezier, A. Ronda, S. Escoubas, 2014 .

Determination of strain within Si1-yCy layers grown by CVD on a Si substrate

F. Hüe, N. Cherkashin, O. Kermarrec, 2007 .

Insights into solid phase epitaxy of ultrahighly doped silicon

Y. Campidelli, I. Berbezier, A. Ronda, 2010 .

Low-temperature solid phase epitaxy for integrating advanced source/drain metal-oxide-semiconductor structures

Y. Campidelli, I. Berbezier, G. Amiard, 2010 .

Selective growth and ordering of SiGe nanowires for band gap engineering

D. J. Lockwood, I. Berbezier, A. Ronda, 2014, Nanotechnology.

On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates

F. Hüe, N. Cherkashin, O. Kermarrec, 2009 .

On morphology and strain field of Ge/Si(001) Islands according to TEM phase imaging method.

I. Berbezier, A. Ronda, P. Donnadieu, 2011, Journal of nanoscience and nanotechnology.