W. V. D. Daele

Superior performance and Hot Carrier reliability of strained FDSOI nMOSFETs for advanced CMOS technology nodes

W. Schwarzenbach, K. Bourdelle, F. Andrieu, 2015 .

A new characterization technique for SOI wafers: Split C(V) in pseudo-MOSFET configuration

G. Ghibaudo, C. Mazure, S. Cristoloveanu, 2013 .

Adaptation of the pseudo-metal-oxide-semiconductor field effect transistor technique to ultrathin silicon-on-insulator wafers characterization: Improved set-up, measurement procedure, parameter extraction, and modeling

S. Cristoloveanu, C. Malaquin, O. Kononchuk, 2013 .

ADVANCED SOLUTIONS FOR MOBILITY ENHANCEMENT IN SOI MOSFETS

O. Faynot, G. Ghibaudo, T. Skotnicki, 2011 .

Ultra-fast CV methods (< 10µs) for interface trap spectroscopy and BTI reliability characterization using MOS capacitors

X. Garros, P. Ferrari, J. Lugo-Alvarez, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS).

Characterization of Silicon-On-Insulator films with pseudo metal-oxide-semiconductor field-effect transistor: correlation between contact pressure, crater morphology and series resistance.

S. Cristoloveanu, X. Mescot, I. Ionica, 2009 .

Reliability of ultra-thin buried oxides for multi-VT FDSOI technology

X. Garros, A. Toffoli, G. Reimbold, 2014 .

Improved GeOI substrates for pMOSFET off-state leakage control

Emmanuel Augendre, Sorin Cristoloveanu, Eric Guiot, 2009 .

Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes

Sorin Cristoloveanu, Gilles Reimbold, François Andrieu, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Low-temperature characterization and modeling of advanced GeOI pMOSFETs: Mobility mechanisms and origin of the parasitic conduction

Emmanuel Augendre, Sorin Cristoloveanu, C. Le Royer, 2010 .