Y. Kudrik

Diffusion-barrier contacts based on the TiN and Ti(Zr)Bx interstitial phases in the microwave diodes for the range of 75–350 GHz

V. V. Milenin, N. S. Boltovets, V. Ulin, 2006 .

Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride

V. V. Milenin, N. S. Boltovets, A. Belyaev, 2008 .

Interphase interactions and features of structural relaxation in TiBx-n-GaAs (InP, GaP, 6H-SiC) contacts subjected to active treatment

V. V. Milenin, N. S. Boltovets, R. Konakova, 2004 .

Peculiarities of the formation and thermal stability of barrier contacts in high-sensitivity silicon carbide detector diodes

V. V. Milenin, N. S. Boltovets, S. K. Abdizhaliev, 2003 .