Shashwat Rathkanthiwar

发表

Material-to-device performance correlation for AlGaN-based solar-blind p–i–n photodiodes

S. Raghavan, R. Muralidharan, D. Nath, 2020, Semiconductor Science and Technology.

Polarization-Graded AlGaN Solar-Blind p-i-n Detector With 92% Zero-Bias External Quantum Efficiency

S. Raghavan, R. Muralidharan, D. Nath, 2019, IEEE Photonics Technology Letters.

Analysis of screw dislocation mediated dark current in Al0.50Ga0.50N solar-blind metal-semiconductor-metal photodetectors

S. Raghavan, R. Muralidharan, D. Nath, 2018, Journal of Crystal Growth.

Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates

Z. Sitar, R. Kirste, J. Tweedie, 2022, Applied Physics Letters.

On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters

P. Reddy, Z. Sitar, B. Sarkar, 2021, Semiconductor Science and Technology.

Demonstration of high-responsivity epitaxial β-Ga2O3/GaN metal–heterojunction-metal broadband UV-A/UV-C detector

S. Raghavan, R. Muralidharan, D. Nath, 2018 .

Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors

Rangarajan Muralidharan, Neha Mohta, S. Raghavan, 2017 .

Doping and compensation in heavily Mg doped Al-rich AlGaN films

P. Reddy, Z. Sitar, B. Sarkar, 2022, Applied Physics Letters.

Role of fuel and fuel-to-oxidizer ratio in combustion synthesis of nano-crystalline nickel oxide powders

A. Ballal, Shashwat Rathkanthiwar, Shreyash H. Hadke, 2015 .

Monoclinic to Cubic Phase Transformation in Combustion Synthesized Gadolinium Oxide

A. Ballal, Shashwat Rathkanthiwar, Shreyash H. Hadke, 2015 .

Si nanowire growth on sapphire: Classical incubation, reverse reaction, and steady state supersaturation

D. Shakthivel, S. Raghavan, Shashwat Rathkanthiwar, 2015 .

Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111)

S. Raghavan, R. Muralidharan, D. Nath, 2020, Journal of Applied Physics.

High conductivity in Ge-doped AlN achieved by a non-equilibrium process

P. Reddy, Z. Sitar, R. Kirste, 2023, Applied Physics Letters.

Role of Surface Processes in Growth of Monolayer MoS2: Implications for Field-Effect Transistors

S. Shivashankar, Hareesh Chandrasekar, Priyadarshini Ghosh, 2021, ACS Applied Nano Materials.

Growth of AlN on sapphire: Predicting the optimal nucleation density by surface kinetics modeling

S. Raghavan, R. Muralidharan, D. Nath, 2020, Journal of Applied Physics.

Polarization independent grating in a GaN-on-sapphire photonic integrated circuit.

S. Selvaraja, Shashwat Rathkanthiwar, Srinivasan Raghavan, 2023, Optics express.

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

M. H. Breckenridge, M. Boćkowski, S. Pavlidis, 2022, Applied Physics Express.

Integration of multi-layered materials with wide bandgap semiconductors for multi-spectral photodetectors: case for MoS2/GaN and β-In2Se3/GaN

Roop K. Mech, S. Raghavan, M. Rangarajan, 2019, Semiconductor Science and Technology.

Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices

P. Reddy, S. Pavlidis, Z. Sitar, 2022 .

High conductivity and low activation energy in p-type AlGaN

P. Reddy, Z. Sitar, R. Kirste, 2023, Applied Physics Letters.