Y. Yamaoka

发表

Effect of threading dislocation in an AlN nucleation layer and vertical leakage current in an AlGaN/GaN high-electron mobility transistor structure on a silicon substrate

T. Egawa, A. Ubukata, Y. Yano, 2019, Semiconductor Science and Technology.

Quantum information processing in a silicon-based system

A. Andreev, S. Oda, T. Ferrus, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Defect observations of Ni/AlGaN/GaN Schottky contacts on Si substrates using scanning internal photoemission microscopy

T. Egawa, K. Shiojima, Y. Yamaoka, 2017 .

Normally-OFF Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with Low Leakage Current and High Breakdown Voltage (825 V)

T. Egawa, A. Ubukata, Y. Yano, 2014 .

Discrete-Pulsed Current Time Method to Estimate Channel Thermal Resistance of GaN-Based Power Devices

Wenwen Li, S. Chowdhury, S. Mandal, 2018, IEEE Transactions on Electron Devices.

Impact of the AlN nucleation layer on the variation of the vertical‐direction breakdown voltage of AlGaN/GaN high‐electron‐mobility transistor structures on a Si substrate

T. Egawa, A. Ubukata, Y. Yano, 2017 .

Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate

T. Egawa, A. Ubukata, Y. Yano, 2013 .

Opportunities and challenges in GaN metal organic chemical vapor deposition for electron devices

A. Ubukata, Y. Yano, T. Tabuchi, 2016 .

Temperature dependence of hole transport properties through physically defined silicon quantum dots

S. Oda, D. Williams, T. Kodera, 2020 .

Charge sensing and spin-related transport property of p-channel silicon quantum dots

S. Oda, T. Kodera, Y. Yamaoka, 2017 .

Characterization of physically-defined double quantum dots on highly-doped silicon substrate

Y. Yamaoka, 2015 .

Electron transport in physically-defined double quantum dots on a highly doped silicon-on-insulator substrate

S. Oda, T. Kodera, Y. Yamaoka, 2016 .

Control of Thickness and Composition Variation of AlGaN/GaN on 6- and 8-in. Substrates Using Multiwafer High-Growth-Rate Metal Organic Chemical Vapor Deposition Tool

A. Ubukata, Y. Yano, Hayato Shimamura, 2013 .

Photoconductivity of Er-doped InAs quantum dots embedded in strain-relaxed InGaAs layers with 1.5 µm cw and pulse excitation

Takahiro Kitada, Naoto Kumagai, Toshiro Isu, 2016 .

Spin–orbit assisted spin funnels in DC transport through a physically defined pMOS double quantum dot

S. Tarucha, T. Nakajima, T. Kodera, 2019, Japanese Journal of Applied Physics.

Fabrication and characterization of physically defined quantum dots on a boron-doped silicon-on-insulator substrate

Mizuki Kobayashi, T. Kodera, T. Makino, 2018 .

Fabrication and characterization of physically-defined double quantum dots without unintentional localized states on highly-doped silicon substrate

S. Oda, T. Kodera, Y. Yamaoka, 2015, 2015 Silicon Nanoelectronics Workshop (SNW).

Spin orbit field in a physically defined p type MOS silicon double quantum dot

D. Loss, S. Tarucha, P. Stano, 2020, 2003.07079.

Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress

Yasuo Ohno, Jin-Ping Ao, Yuya Yamaoka, 2008, IEICE Trans. Electron..

Influence of the Al content of the AlGaN buffer layer in AlGaN/GaN high‐electron‐mobility transistor structures on a Si substrate

T. Egawa, A. Ubukata, Y. Yano, 2017 .