F. Hörich

On reduction of current leakage in GaN by carbon-doping

A. Strittmatter, J. Bläsing, A. Dadgar, 2016 .

Demonstration of lateral epitaxial growth of AlN on Si (1 1 1) at low temperatures by pulsed reactive sputter epitaxy

A. Strittmatter, J. Bläsing, A. Dadgar, 2021 .

Optical properties of cubic GaN from 1 to 20 eV

C. Cobet, N. Esser, J. Bläsing, 2012 .

Properties of C‐doped GaN

A. Strittmatter, J. Bläsing, A. Dadgar, 2017 .

Structural and optical properties of MBE‐grown asymmetric cubic GaN/AlxGa1–xN double quantum wells

D. Reuter, R. Goldhahn, M. Feneberg, 2015 .

Two charge states of the CN acceptor in GaN: Evidence from photoluminescence

H. Morkoç, D. Demchenko, A. Strittmatter, 2018, Physical Review B.

Low-resistivity vertical current transport across AlInN/GaN interfaces

A. Strittmatter, J. Bläsing, A. Dadgar, 2020, Japanese Journal of Applied Physics.