Weihang Zhang

发表

Overcoming the poor crystal quality and DC characteristics of AlGaN/GaN/AlGaN double‐heterostructure high electron mobility transistors

Y. Hao, Jincheng Zhang, Xiangdong Li, 2016 .

AlGaN Channel High Electron Mobility Transistors with an Al x Ga 1 −x N/GaN Composite Buffer Layer

Y. Hao, Jincheng Zhang, Xuezhi Ma, 2015 .

Al0.3Ga0.7N/GaN (10 nm)/Al0.1Ga0.9N HEMTs With Low Leakage Current and High Three-Terminal Breakdown Voltage

Y. Hao, Jincheng Zhang, Weihang Zhang, 2018, IEEE Electron Device Letters.

AlN/GaN Superlattice Channel HEMTs on Silicon Substrate

Y. Hao, Jincheng Zhang, Shenglei Zhao, 2021, IEEE Transactions on Electron Devices.

Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate

Y. Hao, Qing Yang, Jincheng Zhang, 2021, Science China Information Sciences.

Al0.30Ga0.70N/GaN/Al0.07Ga0.93N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050mA/mm*

Y. Hao, Jincheng Zhang, Shenglei Zhao, 2015 .

Wide-range-adjusted threshold voltages for E-mode AlGaN/GaN HEMT with a p-SnO cap gate

Chunfu Zhang, Jincheng Zhang, Shenglei Zhao, 2021, Science China Materials.

Wafer-Scale Si–GaN Monolithic Integrated E-Mode Cascode FET Realized by Transfer Printing and Self-Aligned Etching Technology

Y. Hao, Chunfu Zhang, Jincheng Zhang, 2020, IEEE Transactions on Electron Devices.

AlGaN-Channel Gate Injection Transistor on Silicon Substrate With Adjustable 4–7-V Threshold Voltage and 1.3-kV Breakdown Voltage

Tao Zhang, Y. Hao, Xiao-hua Ma, 2018, IEEE Electron Device Letters.

Investigation of threshold voltage shift and gate leakage mechanisms in normally off AlN/Al0.05Ga0.95N HEMTs on Si substrate

Y. Hao, Jincheng Zhang, Shenglei Zhao, 2020 .

Trap state analysis in AlGaN/GaN/AlGaN double heterostructure high electron mobility transistors at high temperatures

Y. Hao, Jincheng Zhang, Zhiyu Lin, 2017 .

Enhanced breakdown voltage of Si-GaN Monolithic Heterogeneous Integrated Cascode FETs by the device structure design

J. Wan, Chunfu Zhang, Jincheng Zhang, 2022, Solid-State Electronics.

Enhanced Breakdown Voltage of Si-GaN Monolithic Heterogeneous Integrated Cascode FETs by the Device Structure Design

Y. Hao, J. Wan, Chunfu Zhang, 2021, Solid-State Electronics.

Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs

Jincheng Zhang, Shenglei Zhao, Zhihong Liu, 2022, Science China Information Sciences.

Investigation of normally-off GaN-based p-channel and n-channel heterojunction field-effect transistors for monolithic integration

Y. Hao, Jincheng Zhang, Shenglei Zhao, 2021 .

Demonstration of the β-Ga₂O₃ MOS-JFETs With Suppressed Gate Leakage Current and Large Gate Swing

Jincheng Zhang, Xin Feng, E. Ghandourah, 2023, IEEE Electron Device Letters.

Parameter Shift of Quasi-Vertical GaN-on-Si Schottky Barrier Diodes Under On-State Forward-Current (2–4 kA/cm2) Stress

Q. Feng, Jincheng Zhang, Shenglei Zhao, 2023, IEEE Transactions on Electron Devices.

Low ohmic contact resistivity realized by in situ SiNx insertion for high Al-composition-AlGaN/GaN heterostructure

Jincheng Zhang, Zhihong Liu, Hong Zhou, 2022, Applied Physics Letters.

Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Metal Organic Chemical Vapor Deposition

Y. Hao, Jincheng Zhang, Rudai Quan, 2016 .

High Performance Al0.10Ga0.90N Channel HEMTs

Y. Hao, Jincheng Zhang, Jing Ning, 2018, IEEE Electron Device Letters.

More Than 3000 V Reverse Blocking Schottky-Drain AlGaN-Channel HEMTs With >230 MW/cm2 Power Figure-of-Merit

Y. Hao, Jincheng Zhang, Shenglei Zhao, 2019, IEEE Electron Device Letters.

Novel In-Situ AlN/p-GaN Gate HEMTs With Threshold Voltage of 3.9 V and Maximum Applicable Gate Voltage of 12.1 V

Tangsheng Chen, Jincheng Zhang, Shenglei Zhao, 2023, IEEE Transactions on Electron Devices.

High Breakdown-Voltage (>2200 V) AlGaN-Channel HEMTs With Ohmic/Schottky Hybrid Drains

Y. Hao, Jincheng Zhang, Weihang Zhang, 2018, IEEE Journal of the Electron Devices Society.

Analysis of Leakage Mechanisms in AlN Nucleation Layers on p-Si and p-SOI Substrates

E. Simoen, Jincheng Zhang, Weihang Zhang, 2019, IEEE Transactions on Electron Devices.

Investigation of an AlGaN-channel Schottky barrier diode on a silicon substrate with a molybdenum anode

Y. Hao, Jincheng Zhang, Jing Ning, 2020 .

Gamma irradiation impact on GaN quasi-vertical Schottky barrier diodes

Y. Hao, Jincheng Zhang, Jing Ning, 2019, Journal of Physics D: Applied Physics.

High-Performance E-Mode p-Channel GaN FinFET on Silicon Substrate With High ION/IOFF and High Threshold Voltage

Jincheng Zhang, Zhihong Liu, Yue Hao, 2022, IEEE Electron Device Letters.

Low Turn-On Voltage and High-Power Figure-of-Merit GaN HEMTs With Reverse Blocking Capability

Shenglei Zhao, Weihang Zhang, Xi Liu, 2024, IEEE Transactions on Electron Devices.