Seong-Woo Kim

Electrical properties of Ni/i-AlGaN/GaN structures and influence of thermal annealing

Toshimasa Suzuki, T. Sawada, N. Kimura, 2006 .

Suppression of gate leakage current in i‐AlGaN/GaN heterostructures by insertion of anodic Al2O3 layer and influence of thermal annealing on channel electrons

Toshimasa Suzuki, K. Takahashi, T. Sawada, 2007 .

Low-voltage electrophoretic deposition of polyetherimide through quarternization and re-imidization reactions

J. Nam, H. Choi, Youngkwan Lee, 2013, Yu-byeon-hag.

Properties of GaN and AlGaN Schottky contacts revealed from I- V- T and C- V- T measurements

T. Suzuki, Kazuhiko Suzuki, Y. Izumi, 2003 .

Influence of excited states of Mg acceptors on hole concentration in GaN

Toshimasa Suzuki, K. Aso, Seong-Woo Kim, 2003 .