D. Biswas

发表

Growth and Characterization of Self-Assembled InAs Quantum Dots on Si (100) for Monolithic Integration by MBE

Nripendra N. Halder, S. K. Jana, Saptarsi Ghosh, 2014, IEEE Transactions on Nanotechnology.

Strain Effects on Band Structure of Wurtzite InGaN/GaN Quantum Well on Si Substrate

T. D. Das, S. M. Dinara, S. Jana, 2015 .

The influence of strain on the small signal gain and lasing threshold of GaInAs/GaAs and GaAs/GaInAlAs strained-layer quantum well lasers

P. Bhattacharya, J. Pamulapati, J. Singh, 1989, Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,.

Composite-Channel Metamorphic High Electron Mobility Transistor for Low-Noise and High-Linearity Applications

Guo-Wei Huang, Chun-Yen Chang, Dhrubes Biswas, 2004 .