M. Miyamura

Nonvolatile 32×32 crossbar atom switch block integrated on a 65-nm CMOS platform

N. Iguchi, N. Banno, M. Tada, 2012, 2012 Symposium on VLSI Technology (VLSIT).

Bidirectional TaO-diode-selected, complementary atom switch (DCAS) for area-efficient, nonvolatile crossbar switch block

N. Iguchi, N. Banno, M. Tada, 2013, 2013 Symposium on VLSI Technology.

A fast and low-voltage Cu complementary-atom-switch 1Mb array with high-temperature retention

N. Iguchi, N. Banno, M. Tada, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

Polymer solid-electrolyte (PSE) switch embedded in 90nm CMOS with forming-free and 10nsec programming for low power, nonvolatile programmable logic (NPL)

N. Sakimura, N. Iguchi, N. Banno, 2010, 2010 International Electron Devices Meeting.