R. Lal

Improved Dynamic RON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch

U. Mishra, S. Keller, D. Bisi, 2018, IEEE Electron Device Letters.

1200V GaN Switches on Sapphire Substrate

K. Imanishi, U. Mishra, P. Parikh, 2022, 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

GaN Power Commercialization with Highest Quality-Highest Reliability 650V HEMTs-Requirements, Successes and Challenges

K. Imanishi, L. McCarthy, U. Mishra, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Short-Circuit Capability Demonstrated for GaN Power Switches

U. Mishra, YiFeng Wu, P. Parikh, 2021, 2021 IEEE Applied Power Electronics Conference and Exposition (APEC).

Direct water photoelectrolysis with patterned n-GaN

Shuji Nakamura, Umesh K. Mishra, Daniel A. Cohen, 2007 .

Commercialization and reliability of 600 V GaN power switches

Peter Smith, Kurt Smith, Umesh K. Mishra, 2015, 2015 IEEE International Reliability Physics Symposium.

An Accurate Compact Model for GaN Power Switches with the Physics-based ASM-HEMT Model

S. Khandelwal, F. Qi, Y. Wu, 2021, 2021 IEEE Applied Power Electronics Conference and Exposition (APEC).

600 V JEDEC-qualified highly reliable GaN HEMTs on Si substrates

Primit Parikh, Toshihide Kikkawa, Kenji Imanishi, 2014, 2014 IEEE International Electron Devices Meeting.