Ming Xiao

Al0.3Ga0.7N/GaN (10 nm)/Al0.1Ga0.9N HEMTs With Low Leakage Current and High Three-Terminal Breakdown Voltage

Y. Hao, Jincheng Zhang, Weihang Zhang, 2018, IEEE Electron Device Letters.

GaN microrod sidewall epitaxial lateral overgrowth on a close-packed microrod template

Jincheng Zhang, Xiaoling Duan, Jinfeng Zhang, 2018 .

A partly-contacted epitaxial lateral overgrowth method applied to GaN material

Y. Hao, Jincheng Zhang, Jing Ning, 2016, Scientific Reports.

High-quality Ga-rich AlGaN grown on trapezoidal patterned GaN template using super-short period AlN/GaN superlattices for rapid coalescence

Y. Hao, Jincheng Zhang, Ming Xiao, 2017 .

Effect of ITO Film on InGaN/GaN MQWs Solar Cell under Low Total-Dose Gamma-Ray Radiation

Bin Chen, Y. Hao, Jincheng Zhang, 2018 .

Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures*

Y. Hao, Jincheng Zhang, Jing Ning, 2016 .

High Performance Al0.10Ga0.90N Channel HEMTs

Y. Hao, Jincheng Zhang, Jing Ning, 2018, IEEE Electron Device Letters.

High Breakdown-Voltage (>2200 V) AlGaN-Channel HEMTs With Ohmic/Schottky Hybrid Drains

Y. Hao, Jincheng Zhang, Weihang Zhang, 2018, IEEE Journal of the Electron Devices Society.