D. Angermeier

发表

The initial stages of Si thin deposits on foreign substrates in a rapid thermal chemical vapor phase reactor

A. Slaoui, R. Monna, S. Bourdais, 1998 .

Silicon thin film homoepitaxy by rapid thermal atmospheric-pressure chemical vapor deposition (RT-APCVD)

A. Slaoui, R. Monna, J. Muller, 1996 .

Modeling and Process Optimization of ZnSe and ZnS Epitaxial Growth in a Vertical Metallorganic Vapor‐Phase Epitaxy Reactor

C. Thiandoume, O. Gorochov, D. Angermeier, 1998 .

Analysis of the CVD in a horizontal reactor. I. The epitaxy of Ge

R. Triboulet, W. Kuhn, D. Angermeier, 1998 .

Thin‐film silicon formation on foreign substrates by rapid thermal chemical vapour deposition for photovoltaic application

A. Slaoui, R. Monna, J. Muller, 1998 .

Modeling and Analysis of the Silicon Epitaxial Growth with SiHCl3 in a Horizontal Rapid Thermal Chemical Vapor Deposition Reactor

A. Slaoui, R. Monna, J. Muller, 1997 .

Recrystallization-free thin-film crystalline silicon solar cells on foreign substrates

M. Caymax, A. Slaoui, R. Monna, 1998 .

Analysis of thin film polysilicon on graphite substrates deposited in a thermal CVD system

A. Slaoui, R. Monna, J. Muller, 1998 .