Tomoaki Yoneda

SiO bond formation by oxygen implantation into silicon

Y. Kido, K. Kajiyama, Tomoaki Yoneda, 1997 .

Stopping power for 4.8–6.8 MeV C ions along [1 1 0] and [1 1 1] directions in Si

J. Horikawa, Tomoaki Yoneda, S. Saijo, 2018, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.

RECRYSTALLIZATION OF MEV SI IMPLANTED 6H-SIC

T. Motooka, S. Harada, M. Ishimaru, 1996 .

Impact-parameter dependent stopping powers for MeV He ions in Si crystals

Y. Kido, K. Kajiyama, Tomoaki Yoneda, 1999 .

Silicide Synthesis by Fe+ Implantation in Si Substrates

Y. Hoshino, J. Nakata, G. Yachida, 2015 .