Lunchun Guo

Growth and Structural Properties of InAlGaN Quaternary Alloys on Sapphire Substrates by RF-MBE

Zhan-guo Wang, H. Xiao, Bao-Zhu Wang, 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure

Xiaoyan Wang, Xiaoliang Wang, Baozhu Wang, 2008, Microelectron. J..

AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

Ke Xu, H. Kuo, Hong Gu, 2017 .

Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(1 1 1) by MOCVD

Jianping Li, Jinmin Li, Xiaoliang Wang, 2008, Microelectron. J..

Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD

Jianping Li, Jinmin Li, Xiaoliang Wang, 2008, Microelectron. J..

Persistent photoconductivity in n-type undoped high-resistivity GaN

H. Xiao, Xiaoliang Wang, Baorui Wang, 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.