N. Achtziger

发表

Structural and electrical investigation of implantation damage annealing in CdTe

U. Reislöhner, W. Witthuhn, J. Bollmann, 1996 .

Hydrogen passivation of silicon carbide by low-energy ion implantation

W. Witthuhn, B. Svensson, M. Linnarsson, 1998 .

Damage production in GaAs during MeV ion implantation

F. Komarov, U. Reislöhner, P. Gaiduk, 1996 .

Radiotracer Deep Level Transient Spectroscopy

W. Witthuhn, N. Achtziger, 2004 .

Deep levels of tantalum in silicon carbide and incorporation during crystal growth

W. Witthuhn, N. Achtziger, J. Grillenberger, 2001 .

N. Achtziger, 1996 .

Recoil implantation of radioactive transition metals and their investigation in silicon by deep‐level transient spectroscopy

U. Reislöhner, W. Witthuhn, H. Gottschalk, 1995 .

Acceptor-donor pairs in germanium

W. Witthuhn, M. Deicher, H. Wolf, 1992 .

Formation of Passivated Layers in P-Type SiC by Low Energy Ion Implantation of Hydrogen

B. Svensson, M. Linnarsson, M. Janson, 2000 .

Polytype Dependence of Transition Metal-Related Deep Levels in 4H-, 6H- and 15R-SiC

W. Witthuhn, N. Achtziger, J. Grillenberger, 2002 .

Band-gap states of Ti, V, and Cr in 4H-SiC: Identification and characterization by elemental transmutation of radioactive isotopes

W. Witthuhn, N. Achtziger, 1998 .

Band gap states of Ti, V, and Cr in 4H–silicon carbide

W. Witthuhn, N. Achtziger, 1997 .

Deep levels of chromium in 4H-SiC

W. Witthuhn, N. Achtziger, 1997 .

Investigations on implantation doping of wide-bandgap II-VI compounds using radioactive dopants

U. Reislöhner, W. Witthuhn, J. Bollmann, 1999 .

Hydrogen passivation of cd acceptors in III–V semiconductors studied by PAC spectroscopy

U. Reislöhner, W. Witthuhn, D. Forkel-wirth, 1995 .

Investigation of cadmium-hydrogen complexes in silicon

W. Witthuhn, N. Achtziger, A. Baurichter, 1991 .

Passivation and reactivation of shallow level defects in p-CdTe after low-energy hydrogen implantation

U. Reislöhner, W. Witthuhn, N. Achtziger, 2000 .

Deep level transient spectroscopy on radioactive impurities: Demonstration for Si:111In*

M. Uhrmacher, G. Pensl, N. Achtziger, 1991 .

Radiotracer spectroscopy of deep levels in the semiconductor band gap

W. Witthuhn, N. Achtziger, J. Grillenberger, 1999 .

Radiotracer investigation of deep Ga- and Zn-related band gap states in 6H–SiC

W. Witthuhn, N. Achtziger, J. Grillenberger, 1998 .

Complex formation at indium donors in p-CdTe

U. Reislöhner, W. Witthuhn, M. Rüb, 1996 .

Reactivation of Hydrogen-Passivated Aluminum Acceptors in p-type SiC

U. Reislöhner, N. Achtziger, C. Hülsen, 2000 .

Complex formation in In- and Ag/Cu-doped CdTe

U. Reislöhner, W. Witthuhn, P. Rudolph, 1994 .

Combination of Deep Level Transient Spectroscopy and Transmutation of Radioactive Impurities

G. Pensl, N. Achtziger, M. Lang, 1992 .

Investigation of indium-defect pairs in CdTe by PAC spectroscopy

U. Reislöhner, W. Witthuhn, N. Achtziger, 1999 .

Investigation of cadmium‐donor pairs in silicon

W. Witthuhn, H. Wolf, N. Achtziger, 1989 .

Radiotracer identification of a Ta-related deep level in 4H–SiC

R. Sielemann, W. Witthuhn, N. Achtziger, 2000 .

Radiotracer Identification of Ti, V and Cr Band Gap States in 4H- and 6H-SiC

N. Achtziger, J. Grillenberger, W. Witthuhn, 1997 .

Identifitcation of Bandgap States in Semiconductors by Transmutation of Implanted Radioactive Tracers

N. Achtziger, 1997 .

Band gap states of V and Cr in 6H-silicon carbide

N. Achtziger, J. Grillenberger, W. Witthuhn, 1997 .

Band Gap States of Cr in the Lower Part of the SiC Band Gap

W. Witthuhn, N. Achtziger, J. Grillenberger, 2001 .

Radiotracer investigation of a deep Be-related band gap state in 4H-SiC

W. Witthuhn, N. Achtziger, J. Grillenberger, 2001 .

Hydrogen in the Wide Bandgap Semiconductor Silicon Carbide

A. Hallén, U. Forsberg, B. Svensson, 2004 .