M. Wassermeier

发表

LETTER TO THE EDITOR: Regrowth and annealing of In0.22Ga0.78As and GaAs quantum well graded-index separate confinement heterostructure lasers

R. Hey, E. Wiebicke, M. Wassermeier, 2001 .

In-situ spectroscopic ellipsometry and reflectance difference spectroscopy of GaAs(001) surface reconstructions

K. Ploog, J. Behrend, K. Stahrenberg, 1996 .

Growth mode, strain relief, and segregation of (Ga,In)Sb on GaSb(001) grown by molecular beam epitaxy

O. Brandt, K. Ploog, N. Bertru, 1996 .

Atomic structure of the surface reconstructions of zincblende GaN(001)

Hui Yang, O. Brandt, K. Ploog, 1997 .

Atom‐resolved imaging and spectroscopy on the GaAs(001) surface using tunneling microscopy

W. H. Weinberg, P. Petroff, R. Maboudian, 1992 .

Does The 1.25 eV Luminescence of Coherently Strained InGaAs Insertions in GaAs Originate from Quantum Dots

O. Brandt, K. Ploog, A. Mazuelas, 1995 .

Measuring linear polarization of photoluminescence and photoluminescence excitation using a photoelastic modulation technique

J. Merz, P. Petroff, M. Miller, 1992 .

Strain compensation in highly carbon doped {GaAs}/{AlAs} distributed Bragg reflectors

R. Hey, H. Grahn, A. Mazuelas, 1997 .

Lateral band gap modulation by buried stressor structures in III–V compounds semiconductor quantum‐well structures

Y. Li, P. Petroff, Z. Xu, 1992 .

Intersubband resonances in quasi-one-dimensional channels

K. Ploog, J. Kotthaus, W. Hansen, 1988 .

Edge magnetoplasmons in the quantum hall effect regime

A. Wixforth, J. Kotthaus, H. Nickel, 1990 .

Submonolayer Si deposition at low temperatures on the GaAs(001)-(2×4) surface studied by scanning tunneling microscopy

K. Ploog, J. Behrend, L. Däweritz, 1998 .

Controlled anisotropic ordering of Be deposited on the GaAs(001) surface

K. Ploog, J. Behrend, L. Däweritz, 1998 .

Different As desorption behaviour at step edges on InAs(001) and GaAs(001) surfaces

K. Ploog, J. Behrend, M. Wassermeier, 1997 .

Domain formation on the reconstructed GaAs(001) surface

K. Ploog, J. Behrend, L. Däweritz, 1995 .

Surface processes responsible for reflectance-anisotropy oscillations during molecular beam epitaxy growth of GaAs(001)

W. Richter, L. Däweritz, K. Stahrenberg, 1995 .

Acoustic ‘Distributed Source’ Mixing of Smallest Fluid Volumes

A. Wixforth, M. Wassermeier, A. Rathgeber, 2003, physics/0306080.

Room-temperature spin injection from Fe into GaAs.

K. Ploog, M. Ramsteiner, H. Kostial, 2001, Physical review letters.

Virtual-surfactant mediated epitaxy of InAs on GaAs(001) studied by scanning tunneling microscopy

K. Ploog, J. Behrend, M. Wassermeier, 1996 .

Optical spectroscopy of (001) GaAs and AlAs under molecular‐beam epitaxy growth conditions

P. Petroff, J. Harbison, L. Florez, 1991 .

Ga-terminated β-GaN(001) surface reconstructions studied by scanning tunneling microscopy

O. Brandt, K. Ploog, H. Yang, 1998 .

EVALUATION OF THE SURFACE STOICHIOMETRY DURING MOLECULAR BEAM EPITAXY OF CUBIC GAN ON (001) GAAS

Oliver Brandt, Hui Yang, K. H. Ploog, 1996 .

Optimized growth conditions for the epitaxial nucleation of β-GaN on GaAs(001) by molecular beam epitaxy

Hui Yang, O. Brandt, K. Ploog, 1997 .

Scanning tunneling microscopy of the GaAs (311)A surface reconstruction

M. Johnson, J. Sudijono, K. Ploog, 1995 .

Real-Time Optical Diagnostics For Measuring And Controlling Epitaxial Growth

J. Harbison, L. Florez, Hitoshi Tanaka, 1993 .

Reflectance anisotropy oscillations during MOCVD and MBE growth of GaAs (001)

W. Richter, M. Pristovsek, J. Behrend, 1995 .

Surface science lettersScanning tunneling microscopy of the filled and empty arsenic states on the GaAs(001)-(2 × 4) surface

W. H. Weinberg, P. Petroff, R. Maboudian, 1992 .

Tunneling spectroscopy on the GaAs(110) surface: Effect of dopant concentration

W. H. Weinberg, P. Petroff, R. Maboudian, 1992 .

Scanning tunneling microscopy of the filled and empty arsenic states on the GaAs(001)-(2 × 4) surface

W. H. Weinberg, P. Petroff, R. Maboudian, 1992 .

Periodic faceting on vicinal GaAs(110) surfaces during epitaxial growth

P. Petroff, M. Krishnamurthy, M. Wassermeier, 1993 .

RECONSTRUCTION OF THE GAAS(001) SURFACE INDUCED BY SUBMONOLAYER SI DEPOSITION

K. Ploog, J. Behrend, L. Däweritz, 1995 .

Real space imaging of GaAs/AlAs (0 0 1) heterointerfaces

K. Ploog, J. Behrend, W. Braun, 1997 .

Kinematical RHEED simulation of different structure models for the GaAs (311)A surface

Oliver Brandt, K. H. Ploog, Wolfgang Braun, 1996 .

Surface morphology of MBE-grown GaAs(001)-(2×4) and GaAs(001)-faceted surfaces investigated by scanning tunneling microscopy

W. H. Weinberg, P. Petroff, R. Maboudian, 1993 .

Double period RHEED oscillations during MBE growth of GaAs and AlAs on the GaAs(110) surface

Hui Yang, K. Ploog, É. Tournié, 1995 .

Interaction of surface acoustic waves with a two‐dimensional electron system in a LiNbO3‐GaAs/AlGaAs sandwich structure

A. Wixforth, J. Scriba, J. Kotthaus, 1988 .

Growth mechanism of GaAs on (110) GaAs studied by high‐energy electron diffraction and atomic force microscopy

Hui Yang, K. Ploog, É. Tournié, 1994 .

Molecular Beam Epitaxial Growth of (Al,Ga)As Tilted Superlattices on Vicinal GaAs (110)

J. Merz, H. Weman, M. Krishnamurthy, 1991 .

Molecular‐beam epitaxial growth mechanisms of (Al,Ga)As on vicinal GaAs surfaces: Self‐organization and step bunching

P. Petroff, A. Lorke, M. Krishnamurthy, 1993 .

Epitaxial Growth of GaAs-AIGaAs Quantum Wire Superlattices on Vicinal Surfaces.

J. Merz, P. Petroff, H. Kroemer, 1991 .

Morphological instabilities on exactly oriented and on vicinal GaAs (001) surfaces during molecular beam epitaxy

H. Raidt, R. Hey, K. Ploog, 1995 .

Grazing-incidence x-ray scattering from stepped interfaces in AlAs/GaAs superlattices

R. Hey, R. Köhler, M. Schmidbauer, 1997 .

Influence of growth conditions for GaAs quantum wells and composition fluctuations in Al(Ga)As barriers on exciton and electron localization

R. Hey, K. Ploog, M. Ramsteiner, 1998 .

Growth-mode-induced surface morphology and its relation to optical properties of GaAs single quantum wells

R. Hey, K. Ploog, M. Ramsteiner, 1997 .

Investigation of the interface roughness of GaAs single quantum wells by X-ray diffractometry, reflectivity and diffuse scattering

R. Hey, K. Ploog, B. Jenichen, 1997 .

Minimizing interface contamination in MBE overgrowth

R. Hey, H. Kostial, E. Wiebicke, 1999 .

Characterization of zinc blende InxGa1−xN grown by radio frequency plasma assisted molecular beam epitaxy on GaAs (001)

Oliver Brandt, K. H. Ploog, Bernd Jenichen, 1997 .

Flat fluidics: a new route toward programmable biochips

Christoph Gauer, Achim Wixforth, Matthias Wassermeier, 2003, SPIE MOEMS-MEMS.