C. Hums

发表

Thermal stability of metal organic vapor phase epitaxy grown AlInN

J. Bläsing, A. Dadgar, A. Krost, 2007 .

Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN

R. H. Jansen, P. Schley, J. Bläsing, 2010 .

Characterization of AlGaInN layers using X‐ray diffraction and fluorescence

J. Bläsing, A. Dadgar, A. Krost, 2011 .

Growth of blue GaN LED structures on 150-mm Si(1 1 1)

J. Bläsing, A. Dadgar, A. Krost, 2006 .

Photoelectric properties of the undoped GaN/AlN interlayer/high purity Si(1 1 1) interface

A. Dadgar, A. Krost, Kay-Michael Guenther, 2009 .

MOVPE Growth and Characterization of AlInN FET Structures on Si(111)

J. Bläsing, S. Krischok, A. Dadgar, 2008 .

Erratum: “Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range” [Appl. Phys. Lett.90, 022105 (2007)]

J. Bläsing, E. Alves, A. Dadgar, 2007 .

Development of Dual MQW Region LEDs for General Illumination

I. Ferguson, M. Strassburg, N. Dietz, 2004 .

Multifunctional III-nitride dilute magnetic semiconductor epilayers and nanostructures as a future platform for spintronic devices

Martin Strassburg, Nikolaus Dietz, Ali Asghar, 2005, SPIE OPTO.

Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range

Jürgen Christen, Armin Dadgar, Thomas Hempel, 2007 .

Fabry-Perot effects in InGaN∕GaN heterostructures on Si-substrate

Jürgen Christen, Armin Dadgar, Thomas Hempel, 2007 .

Stranski–Krastanov transition and self-organized structures in low-strained AlInN/GaN multilayer structures

J. Bläsing, A. Dadgar, A. Krost, 2010 .

Investigation of molecular co-doping for low ionization energy p-type centers in (Ga,Al)N

I. Ferguson, M. Strassburg, N. Dietz, 2003 .