J. Dennemarck

TEM investigation of defect reduction and etch pit formation in GaN

P. Ryder, D. Hommel, T. Böttcher, 2003 .

Wave guide optimization for homoepitaxial laser diodes

S. Figge, D. Hommel, T. Aschenbrenner, 2007 .

Homoepitaxial laser diodes emitting at 390 nm and the influence of substrate quality

S. Figge, D. Hommel, J. Dennemarck, 2007 .

Comparative Study of GaN Based Light Emitting Devices Grown on Sapphire and GaN Substrates

G. Alexe, S. Figge, D. Hommel, 2004 .

Two‐step growth of InGaN quantum dots and application to light emitters

J. Falta, S. Figge, D. Hommel, 2007 .