K. Ku

发表

An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method

Jung Gon Kim, Won-Jae Lee, Il-soo Kim, 2007 .

Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method

Jung Gon Kim, Won-Jae Lee, Il-soo Kim, 2007 .

High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design

Ju-Young Lee, Won-Jae Lee, Geun-Hyoung Lee, 2006 .

Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)

Haedo Jeong, Won-Jae Lee, B. Shin, 2008 .

SiC Crystal Growth by Sublimation Method with Modification of Crucible and Insulation Felt Design

Won-Jae Lee, Geun-Hyoung Lee, Il-soo Kim, 2005 .

Modified Hot-Zone Design for Large Diameter 4H-SiC Single Crystal Growth

Won-Jae Lee, S. K. Ko, J. Seo, 2019, Materials Science Forum.

The Quality Investigation of 6H-SiC Crystals Grown by a Conventional PVT Method with Various SiC Powders

Won-Jae Lee, B. Shin, Younghee Kim, 2010 .

Initial Stage Modification for 6H-SiC Single Crystal Grown by the Physical Vapor Transport (PVT) Method

Won-Jae Lee, Il-soo Kim, B. Shin, 2009 .

Diameter Expansion of 6H-SiC Single Crystals by the Modification of Crucible Structure Design

Won-Jae Lee, Il-soo Kim, B. Shin, 2006 .

Resistivity Increase in 6H-SiC Crystal Grown with Simple Modification in PVT Process

Young Gon Kim, Won-Jae Lee, J. Seo, 2018, Materials Science Forum.