B. Dietrich

发表

Integration of strained and relaxed silicon thin films on silicon wafers via engineered oxide heterostructures: Experiment and theory

P. Zaumseil, T. Schroeder, A. Giussani, 2010 .

Growth and properties of strained Si1-x-yGexCy layers

H. Osten, H. Rücker, S. Jain, 1995 .

Strain relaxation in tensile-strained layers on Si(001)

G. Fischer, E. Bugiel, P. Zaumseil, 1996 .

Dependence of the interface sharpness of a Ge single quantum well on molecular‐beam‐epitaxial growth conditions

H. Osten, E. Bugiel, G. Lippert, 1994 .

Local structure of strain-compensated epitaxial Si1−x−yGexCy layers on Si(001) grown with molecular beam epitaxy

H. Osten, H. Rücker, M. Methfessel, 1995 .

Molecular beam epitaxy of strained Si1−xGex layers on patterned substrates

E. Bugiel, H. Osten, B. Dietrich, 1993 .

Raman investigations of elastic strain relief in Si1−xGex layers on patterned silicon substrate

E. Bugiel, P. Zaumseil, H. Osten, 1993 .

Elastic strain and enhanced light emission in dry etched Si/Si1-xGex quantum dots

E. Parker, C. Torres, G. V. Hansson, 1996 .

Raman spectroscopy of dry etched SiSi1−xGex quantum dots

E. Parker, C. Torres, Y. Tang, 1995 .

Measurement of stress and relaxation in Si1−xGex layers by Raman line shift and x‐ray diffraction

H. Osten, E. Bugiel, P. Zaumseil, 1993 .

Atomic structure and lattice dynamics of strain-compensated Si1-x-yGexCy layers

H. Osten, H. Rücker, P. Zaumseil, 1994 .

Impurity‐mediated growth and characterization of thin pseudomorphic germanium layers in silicon

H. Osten, E. Bugiel, B. Dietrich, 1994 .

Characterization of very thin MBE-grown Ge epilayers on (001) Si

Wolfgang Kissinger, H. J. Osten, Gunther Lippert, 1994, Photonics West - Lasers and Applications in Science and Engineering.

Residual strain in Si-Si1−xGex quantum dots

H. Presting, E. Parker, T. Whall, 1996 .

Photoluminescence and Raman spectroscopy of SiSi1 − xGex quantum dots

E. Parker, T. Whall, C. Torres, 1995 .

Photoluminescence and Raman spectroscopy of {Si}/{Si 1 - x Ge x } quantum dots

E. Parker, T. Whall, C. Torres, 1995 .

Selective Ge heteroepitaxy on free-standing Si (001) nanopatterns: A combined Raman, transmission electron microscopy, and finite element method study

B. Tillack, T. Schroeder, M. Schubert, 2011 .

Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon

G. Capellini, M. Lehmann, T. Schroeder, 2015 .

Complex interface and growth analysis of single crystalline epi‐Si(111)/Y2O3/ Pr2O3/Si(111) heterostructures: Strain engineering by oxide buffer control

P. Zaumseil, T. Schroeder, A. Wilke, 2011 .