K. Banerjee

发表

Study of Short- and Long-Term Effectiveness of Ammonium Sulfide as Surface Passivation for InAs/GaSb Superlattices Using X-Ray Photoelectron Spectroscopy

S. Krishna, E. Plis, Siddhartha Ghosh, 2010 .

Avalanche Mechanism in p+-n−-n+ and p+-n Mid-Wavelength Infrared Hg1−xCdxTe Diodes on Si Substrates

C. Grein, J. Zhao, S. Velicu, 2008 .

11.5: A MEMS-based vacuum gauge for measuring pressure and out-gassing rates in miniaturized vacuum microelectronic devices

Matthew L. Cantwell, Julie Chang, H. Busta, 2010, International Vacuum Nanoelectronics Conference.

Free standing luminescent silicon quantum dots: evidence of quantum confinement and defect related transitions

Siddhartha Ghosh, Syed Minhaz Hossain, Koushik Banerjee, 2010, Nanotechnology.

Dual-Carrier High-Gain Low-Noise Superlattice Avalanche Photodiodes

M. Hayat, S. Ghosh, Jun Huang, 2013, IEEE Transactions on Electron Devices.

Electrical Characterization of Different Passivation Treatments for Long-Wave Infrared InAs/GaSb Strained Layer Superlattice Photodiodes

Elena Plis, Sanjay Krishna, Siddhartha Ghosh, 2009 .

Midwave infrared InAs/GaSb strained layer superlattice hole avalanche photodiode

Elena Plis, Christoph H. Grein, Sanjay Krishna, 2009 .

Low-Noise Mid-Wavelength Infrared Avalanche Photodiodes

S. Krishna, E. Plis, C. Grein, 2008 .

Ultralow noise midwave infrared InAs–GaSb strain layer superlattice avalanche photodiode

Elena Plis, Christoph H. Grein, Sanjay Krishna, 2007 .

Midwavelength Infrared Avalanche Photodiode Using InAs–GaSb Strain Layer Superlattice

S. Mallick, K. Banerjee, Siddhartha Ghosh, 2007, IEEE Photonics Technology Letters.

Single Carrier Initiated Low Excess Noise Mid-Wavelength Infrared Avalanche Photodiode using InAs-GaSb Strained Layer Superlattice

S. Krishna, E. Plis, C. Grein, 2008 .

Modeling and simulation of long-wave infrared InAs/GaSb strained layer superlattice photodiodes with different passivants

Siddhartha Ghosh, Jun Huang, K. Banerjee, 2011 .