K. Horita

Advanced shallow trench isolation to suppress the inverse narrow channel effects for 0.24 /spl mu/m pitch isolation and beyond

Y. Inoue, M. Inuishi, K. Eikyu, 2000, 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104).

Total dose dependence of soft-error hardness in 64 kbit SRAMs evaluated by single-ion microprobe technique

T. Matsukawa, I. Ohdomari, S. Matsuda, 1994 .

Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45 nm Node Devices and Beyond

Y. Ohji, M. Inuishi, T. Kuroi, 2005 .

Layout-Independent Transistor with Stress-Controlled and Highly Manufacturable Shallow Trench Isolation Process

Y. Inoue, T. Yamashita, Y. Horiba, 2007 .

Radiation immunity of pMOSFETs and nMOSFETs examined by means of MeV He single ion microprobe

T. Matsukawa, I. Ohdomari, M. Koh, 1996 .

Radiation effects induced by high energy He single ions at Si/SiO2 interfaces

T. Matsukawa, I. Ohdomari, M. Koh, 1994 .

Design consideration of 0.4V-operation SOTB MOSFET for super low power application

T. Iwamatsu, H. Oda, Y. Inoue, 2011, 2011 International Meeting for Future of Electron Devices.

Scaling of shallow trench isolation with stress control for 65nm node and beyond

T. Kuroi, K. Horita, K. Horita, 2004, Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..

Stress analysis of shallow trench isolation for 256 M DRAM and beyond

T. Nishimura, T. Kuroi, K. Horita, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).