L. Smith

发表

Dependence of the critical thickness on Si doping of InGaAs on GaAs

D. Wallis, B. Tanner, A. Johnson, 2000 .

Excited state dynamics in In0.5Al0.04Ga0.46As/Al0.08Ga0.92As self-assembled quantum dots

J. R. Jensen, J. Hvam, V. Zwiller, 2001 .

An improved method of trimethylindium transport for the growth of indium phosphide and related alloys by MOVPE

A. C. Jones, J. Bosnell, L. Smith, 1992 .

Tuning the properties of magnetic CdMnTe quantum dots

H. Jackson, G. Karczewski, W. Heiss, 2003, cond-mat/0308112.

Low-temperature photoluminescence imaging and time-resolved spectroscopy of single CdS nanowires

L. Lauhon, H. Jackson, T. Hoang, 2006, cond-mat/0606427.

Resonant spectroscopy of II-VI self-assembled quantum dots: Excited states and exciton-longitudinal optical phonon coupling

H. Jackson, G. Karczewski, K. Fronc, 2003, cond-mat/0309410.

Resonant photoluminescence and excitation spectroscopy of CdSe/ZnSe and CdTe/ZnTe self-assembled quantum dots

J. Furdyna, H. Jackson, G. Karczewski, 2003, cond-mat/0310571.

Subwavelength multichannel imaging using a solid immersion lens: Spectroscopy of excitons in single quantum dots

H. Jackson, G. Karczewski, J. Kossut, 2004, cond-mat/0408545.

Wavelength-dispersive x-ray microanalysis as a novel method for studying magnesium doping in gallium nitride epitaxial films

M. G. Cheong, S. Romani, S. Rushworth, 2006 .

Exciton spin relaxation time in quantum dots measured by continuous-wave photoluminescence spectroscopy

H. Jackson, G. Karczewski, J. Kossut, 2003, cond-mat/0308116.

Tuning the properties of magnetic CdMnTe quantum dots

H. Jackson, G. Karczewski, W. Heiss, 2003, cond-mat/0308112.

Improved materials for MOVPE growth of GaSb and InSb

R. M. Graham, T. Seong, N. Mason, 1993 .

In situ x-ray topography measurement of the growth temperature dependence of the critical thickness of epitaxial InGaAs on GaAs

D. Wallis, B. Tanner, A. Johnson, 2001 .

Low-temperature photoluminescence imaging and time-resolved spectroscopy of single CdS nanowires

L. Lauhon, H. Jackson, T. Hoang, 2006, cond-mat/0606427.

Optically-induced magnetization of CdMnTe self-assembled quantum dots

H. Jackson, G. Karczewski, J. Kossut, 2004, cond-mat/0403298.

Optical studies of zero-field magnetization of CdMnTe quantum dots: Influence of average size and composition of quantum dots

H. Jackson, G. Karczewski, W. Heiss, 2004, cond-mat/0408658.

The growth and characterization of CdxHg1−xTe (CMT) on GaAs for optical fibre communication devices

J. Thompson, C. Lanzieri, A. Cetronio, 1989 .

Resonant spectroscopy of II-VI self-assembled quantum dots: Excited states and exciton-longitudinal optical phonon coupling

J. Furdyna, H. Jackson, G. Karczewski, 2003, cond-mat/0309410.

The influence of trimethylindium impurities on the performance of InAlGaAs single quantum well lasers

John P. R. David, J. David, J. Roberts, 1998 .

Dimethyldiselenide and diethyldisulphide as novel Se and S precursors for the low-temperature MOVPE growth of ZnSe, ZnS and ZnSSe

C. Zanotti-Fregonara, S. Rushworth, P. Prete, 2000 .

Amorphous superconducting ribbons quenched at elevated substrate temperature

P. L. Dunn, S. Poon, R. Elmquist, 1982 .

Hexamethyldisilane/propane versus silane/propane precursors: application to the growth of high-quality 3C–SiC on Si

G. Ferro, S. Rushworth, E. Polychroniadis, 2003 .

Control of Al‐doping in 4H–SiC homo‐epitaxial layers grown with a HMDS/TMA/P mixture

S. Rushworth, Y. Monteil, J. Camassel, 2005 .

Subwavelength multichannel imaging using a solid immersion lens: Spectroscopy of excitons in single quantum dots

H. Jackson, G. Karczewski, J. Kossut, 2004, cond-mat/0408545.

Exciton spin relaxation in quasiresonantly excited CdTe/ZnTe self-assembled quantum dots

H. Jackson, K. Fronc, J. Kossut, 2003, cond-mat/0307674.

Resonant photoluminescence and excitation spectroscopy of CdSe/ZnSe and CdTe/ZnTe self-assembled quantum dots

J. Furdyna, H. Jackson, G. Karczewski, 2003, cond-mat/0310571.

Tuning spin properties of excitons in single CdTe quantum dots by annealing

H. Jackson, G. Karczewski, W. Heiss, 2008, Nanotechnology.

The effect of V/III ratio and catalyst particle size on the crystal structure and optical properties of InP nanowires

H. Jackson, C. Jagadish, J. Zou, 2009, Nanotechnology.

Sensitivity of exciton spin relaxation in quantum dots to confining potential

H. Jackson, G. Karczewski, W. Heiss, 2004, cond-mat/0409507.

Temperature dependent photoluminescence of single CdS nanowires

L. Lauhon, H. Jackson, T. Hoang, 2006, cond-mat/0606428.

The growth of CdHgTe by MOCVD at reduced temperatures

J. Thompson, D. Cole-Hamilton, P. Mackett, 1988 .

The growth of CdHgTe using the interdiffused multilayer process at reduced temperatures

J. Thompson, P. Mackett, L. Smith, 1987 .

Conductivity and Mobility Profiles at 300 and 77 K of Epitaxial Cd x Hg1 − x Te Layers

J. Thompson, L. Smith, R. Nicholls, 1989 .

Metal organic chemical vapour deposition (MOCVD) of cadmium telluride, mercury telluride and cadmium mercury telluride

J. Thompson, J. Thompson, L. M. Smith, 1990 .

The growth of CMT on GaAs for high quality linear arrays of MWIR and LWIR photodiodes

J. Thompson, D. Patel, A. Durand, 1991 .

III-V compound semiconductor nanowires

H. Jackson, H. Tan, C. Jagadish, 2009, 2009 IEEE Nanotechnology Materials and Devices Conference.

730 nm InAlGaAs SQW laser diodes grown by MOVPE using 'ether-free' and conventional 'solution' trimethylindium

J. Roberts, P. Tihanyi, L. Smith, 2000 .

1,1-Dimethylhydrazine as a high purity nitrogen source for MOVPE-water reduction and quantification using nuclear magnetic resonance, gas chromatography-atomic emission detection spectroscopy and cryogenic-mass spectroscopy analytical techniques

R. Odedra, S. Rushworth, S. Irvine, 2000 .

MOMBE growth studies of GaN using metalorganic sources and nitrogen

C. T. Foxon, S. Rushworth, R. Campion, 2003 .

MOMBE growth studies of GaN using metalorganic sources and N or NH/sub 3/

C. T. Foxon, S. Rushworth, R. Campion, 2002, International Conference on Molecular Bean Epitaxy.