B. Pichaud

发表

ELEMENTAL DISLOCATION MECHANISMS INVOLVED IN THE RELAXATION OF HETEROEPITAXIAL SEMICONDUCTING SYSTEMS

M. Putero, B. Pichaud, N. Burle, 1999 .

LBIC measurements of the recombining activity of dislocations in float zone silicon

S. Martinuzzi, B. Pichaud, J. Mariani, 1989 .

X-ray study of relaxation process of strained GaAs layers grown on (100) Ge substrates

R. Saint-Jacques, B. Pichaud, N. Burle, 1995 .

X-Ray Measurements of Deformations in Films and Substrates in Heteroepitaxial SYSTEM GaAs/Ge

O. Thomas, B. Pichaud, N. Burle, 1994 .

Structural characterization of nc-Si films grown by low-energy PECVD on different substrates

S. Pizzini, G. Isella, A. L. Donne, 2008 .

Advances in Structural Characterization of Thin Film Nanocrystalline Silicon for Photovoltaic Applications

S. Pizzini, G. Isella, S. Binetti, 2007 .

Nanocrystalline silicon films as multifunctional material for optoelectronic and photovoltaic applications

L. Colombo, S. Sanguinetti, E. Grilli, 2006 .

Links Between Etching Grooves Of Partial Dislocations And Their Characteristics Determined By TEM In 4H SiC

M. Texier, G. Regula, M. Lancin, 2008 .

Low misfit systems as tools for understanding dislocation relaxation mechanisms in semiconducting heteroepitaxial films

C. Curtil, M. Putero-Vuaroqueaux, B. Pichaud, 2002 .

Defects created in N-doped 4H-SiC in the brittle regime: Stacking fault multiplicity and dislocation cores

M. Texier, G. Regula, M. Lancin, 2009 .

Nitrogen doping and multiplicity of stacking faults in SiC

P. Pirouz, M. Lancin, B. Pichaud, 2006 .

Grain Boundaries and Intragrain Defects Dependence of Local and Global Electronic and Photovoltaic Properties of CGE Polysilicon

S. Martinuzzi, M. Zehaf, B. Pichaud, 1982 .

Competitive Role of Impurities on the Electrical Activity of as-grown Σ=13, Σ=25 and Deformed Σ=9 Grain boundaries in p-type Silicon Bi-crystals

M. Acciarri, E. Ntsoenzok, O. Palais, 2012 .

Misfit dislocation cross-slip at the first stages of plastic relaxation in low-mismatch heterostructures

M. Putero, B. Pichaud, N. Burle, 2001 .

Influence of metal trapping on the shape of cavities induced by high energy He+ implantation

M. Desvignes, G. Regula, M. Lancin, 2006 .

Characterizing and modeling the evolution of silicon oxide precipitates during thermal cycles

C. Serafino, B. Pichaud, N. Burle, 2013 .

Growth and migration of nanocavities in He+ multi-implanted Si measured by in situ small-angle X-ray scattering

E. Ntsoenzok, M. Beaufort, G. Regula, 2014 .

Luminescence of Dislocations and Oxide Precipitates in Si

S. Pizzini, S. Binetti, M. Acciarri, 2003 .

Annealing effect on the electrical activity of extended defects in plastically deformed p‐Si with low dislocation density

E. Yakimov, B. Pichaud, O. V. Feklisova, 2005 .

Determination du systeme de glissement le plus contraint en tout point d'un monocristal C.F.C. aux premiers stades de l'indentation par une sphere

B. Pichaud, F. Minari, P. Bellandi, 1970 .

Quantitative determination of the recombining activities of 60° and screw dislocations in float zone and Czochralski-grown silicon

S. Martinuzzi, B. Pichaud, J. Mariani, 1992 .

Effect of Co, Pt, and Au additions on the stability and epitaxy of NiSi2 films on (111)Si

D. Mangelinck, Patrick Gas, O. Thomas, 1998 .

Formation of Ni silicide from Ni(Au) films on (111)Si

D. Mangelinck, O. Thomas, Patrick Gas, 1996 .

Gold clusters precipitation at the interface between Ni(Au) silicides and (111) silicon

D. Mangelinck, Patrick Gas, A. Grob, 1995 .

PLATINUM GETTERING IN SILICON BY SILICON PHOSPHIDE PRECIPITATES

J. Quoirin, A. Lhorte, B. Pichaud, 1996 .

Tungsten diffusion in silicon

C. Grosjean, M. Texier, A. Portavoce, 2014 .

Selection of the glide systems activated at low stresses in copper

B. Pichaud, F. Minari, M. Burle, 1981 .

30° Si(g) partial dislocation mobility in nitrogen-doped 4H-SiC

H. Idrissi, G. Regula, M. Lancin, 2007 .

Study by Weak Beam and HRTEM of double stacking faults created by external mechanical stress in 4H-SiC

H. Idrissi, G. Regula, B. Pichaud, 2004 .

Structure of dislocation bands produced by a bending stress in a low-stacking-fault energy f.c.c. material: Ag-1·2 at. % Sn

B. Pichaud, F. Minari, M. Burle, 1982 .

{110} Slip in copper slightly deformed at room temperature

B. Pichaud, F. Minari, 1980 .

X-ray topographic analysis of a particular dislocation-dislocation interaction inducing cross-slip

B. Pichaud, F. Minari, L. Capella, 1980 .

Further topographic observations of zigzag stress-induced dislocations in copper crystals

B. Pichaud, F. Minari, 1979 .

On the origin of disclocations observed by X-ray topography during microdeformation tests on f.c.c. metals

B. Pichaud, F. Minari, J. Kellbrhals, 1979 .

Cross-slip at very low stresses in highly perfect Cu crystals

B. Pichaud, F. Minari, 1976 .

X-ray topographic observation of dislocation multiplication by cross-slip in Cu crystals

B. Pichaud, F. Minari, L. Capella, 1975 .

DISLOCATIONS AND FREE SURFACES IN THE MICROPLASTIC DEFORMATION OF F.C.C. METALS: AN X-RAY TOPOGRAPHIC STUDY

B. Pichaud, F. Minari, 1981 .

Calculation of critical shapes and stresses of surface sources of dislocations

B. Pichaud, F. Minari, J. Kellerhals, 1978 .

Production of a large planar array of Lomer-Cottrell locks in silver by controlled mechanical straining

B. Pichaud, F. Minari, M. Burle, 1982 .

Temperature dependence of dislocation efficiency as sinks for self‐interstitials in silicon as measured by gold diffusion

E. Yakimov, B. Pichaud, G. Mariani, 1995 .

Dislocations as sinks for self-interstitials in gold doped silicon

B. Pichaud, G. Mariani, 1992 .

QUANTITATIVE DETERMINATION OF THE RECOMBINING ACTIVITIES OF 60° AND SCREW DISLOCATIONS IN FZ AND CZ SILICON

S. Martinuzzi, B. Pichaud, F. Minari, 1991 .

Dislocation motion by double-kink migration in a bent crystal. Velocity measurements in silicon

B. Pichaud, F. Minari, P. Jean, 1986 .

Cathodoluminescence and electron beam induced current investigations of stacking faults mechanically introduced in 4H-SiC in the brittle domain

E. Yakimov, G. Regula, B. Pichaud, 2013 .

LACBED study of extended defects in 4H-SiC

M. Texier, G. Regula, M. Lancin, 2006 .

Structural characterization of double stacking faults induced by cantilever bending in nitrogen-doped 4H-SiC

H. Idrissi, M. Lancin, B. Pichaud, 2005 .

Dislocation multiplication in GaAs : inhibition by doping

J. Castaing, B. Pichaud, A. Djemel, 1989 .

Dislocation–gold interaction in silicon the role of dislocations as sinks for self-interstitials

W. Taylor, B. Pichaud, G. Mariani, 1993 .

Influence of Some Physical and Chemical Parameters on the Recombining Activity of Dislocations in Silicon

S. Martinuzzi, B. Pichaud, J. Mariani, 1991 .

Silver Nanocrystals at Cavities Created by High Energy Helium Implantation in Bulk Silicon

E. Ntsoenzok, G. Regula, M. Lancin, 2007 .

Thermal Growth of He-cavities in Si Studied by Cascade Implantation

S. Ashok, E. Ntsoenzok, G. Regula, 2005 .

Helium implant depth dependence on thermal growth of nanocavities in silicon

S. Ashok, E. Ntsoenzok, G. Regula, 2004, Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..

Structural and optical characterization of a dispersion of nanocavities in a crystalline silicon matrix

S. Pizzini, E. Ntsoenzok, L. Martinelli, 2004 .

Nickel Gettering in Silicon: Role of Oxygen

E. Ntsoenzok, G. Regula, B. Pichaud, 2001 .

Evolution of nucleation sites and bubble precursors in silicon as a function of helium implanted dose

R. Delamare, E. Ntsoenzok, C. L. Liu, 2002 .

Structural disordering and extended defects produced by He-implantation in silicon carbide

M. Texier, M. Beaufort, J. Barbot, 2013 .

Glide systems in α-Ga: Further results deduced from transmission electron microscopy observations

B. Pichaud, F. Minari, N. Burle-Durbec, 1984 .

Glide systems in gallium: justification by dislocation specific energies

B. Pichaud, F. Minari, N. Durbec, 1981 .

Structural and Thermal Studies of HfPd System Prepared by Mechanical Alloying

M. Al‐Assiri, A. Al-Hajry, S. Al-Heniti, 2000 .

Identification of Burgers vectors along in In-doped GaAs, by X-ray transmission topography and image simulation

Y. Epelboin, A. Soyer, B. Pichaud, 1986 .

Study of dislocations in highly in doped GaAs crystals grown by liquid encapsulation czochralski technique

M. Duseaux, B. Pichaud, F. Minari, 1985 .

High temperature Si(0 0 1) surface defect evolution during extended annealing: experimental results and modelling

D. Barge, J. Joly, B. Pichaud, 2004 .

Roles of local He concentration and Si sample orientation on cavity growth in amorphous silicon

M. Barthe, E. Ntsoenzok, M. Canino, 2011 .

Growth of high perfection Ag-Sn crystals

J. Bernardini, B. Pichaud, F. Minari, 1978 .

Microstructure and residual stresses in (111) Au/Ni multilayers

A. Marty, O. Thomas, C. Alfonso, 1996 .

Temperature dependence of electron beam induced current contrast of deformation-induced defects in silicon

E. Yakimov, N. Yarykin, B. Pichaud, 2004 .

Determination of silicon oxide precipitate stoichiometry using global and local techniques

B. Pichaud, N. Burle, J. Nicolai, 2013 .

Segregation and Precipitation of Platinum Silicides in Si/SiO2 Interfaces and Dislocations

D. Mangelinck, J. Quoirin, A. Lhorte, 1994 .

Kinetic Reaction of the Formation of the Platinum Related Complex at the Origin of the p-Type Doping Effect in Silicon

L. Ventura, W. Vervisch, A. Lhorte, 2003 .

p-type doping by platinum diffusion in low phosphorus doped silicon

L. Ventura, W. Vervisch, B. Pichaud, 2003 .

Pt s -O i Complex Formation in Platinum Diffused Silicon

L. Ventura, W. Vervisch, A. Lhorte, 2005 .

Structural characterization of 6H and 4H-SiC polytypes by means of cathodoluminescence and X-Ray Topography

L. Ottaviani, H. Idrissi, S. Martinuzzi, 2004 .

Si (001) surface defects after extended high temperature annealing

D. Barge, G. Rolland, J. Joly, 2000 .

Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor

M. Guzzi, E. Grilli, H. Känel, 2013 .

Effect of oxygen aggregation processes on the recombining activity of 60° dislocations in Czochralski grown silicon

S. Pizzini, S. Binetti, M. Acciarri, 1994 .

Hydrogenated Nanocrystalline Silicon Investigated by Conductive Atomic Force Microscopy

S. Pizzini, D. Chrastina, G. Isella, 2008 .

Core Composition of Partial Dislocations in N-Doped 4H-SiC Determined by TEM Techniques, Dislocation Core Reconstruction and Image Contrast Analysis

M. Texier, G. Regula, M. Lancin, 2008 .

Investigation of Mechanical Stress-Induced Double Stacking Faults in (11-20) Highly N-Doped 4H-SiC Combining Optical Microscopy, TEM, Contrast Simulation and Dislocation Core Reconstruction

L. Ottaviani, H. Idrissi, G. Regula, 2006 .

Dynamical Study of Dislocations and 4H → 3C Transformation Induced by Stress in (11-20) 4H-SiC

H. Idrissi, G. Regula, M. Lancin, 2005 .

Structural characterisation of $(11{\bar 2}0)$ 4H-SiC substrates by cathodoluminescence and X-ray topography

L. Ottaviani, H. Idrissi, S. Martinuzzi, 2004 .

Structural and electrical studies of partial dislocations and stacking faults in (11-20)-oriented 4H-SiC

L. Ottaviani, H. Idrissi, P. Hidalgo, 2005 .

Epitaxial growth and lattice match of cobalt and nickel disilicides/Si(111) gold and cobalt doping of NiSi2

D. Mangelinck, Patrick Gas, B. Pichaud, 1996 .

Dislocation luminescence in plastically deformed silicon crystals: effect of dislocation intersection and oxygen decoration

S. Pizzini, S. Binetti, E. Leoni, 2004 .

Experimental and theoretical study of misfit dislocation development in low-mismatched heterostructures: Application to GaAs/Ge

M. Putero, B. Pichaud, N. Burle, 1999 .

Stacking faults in intrinsic and N-doped 4H–SiC: true influence of the N-doping on their multiplicity

S. Juillaguet, G. Regula, T. Neisius, 2013 .

Study of Shockley partial dislocation mobility in highly N-doped 4H-SiC by cantilever bending

H. Idrissi, G. Regula, M. Lancin, 2005 .

Dislocation Nucleation in Heteroepitaxial Semiconducting Films

M. Texier, V. Vdovin, B. Pichaud, 2009 .

Very First Relaxation Steps in Low Temperature Buffer Layers SiGe/Si Heterostructures Studied by X-Ray Topography

V. Vdovin, B. Pichaud, N. Burle, 2007 .

Defect engineering via ion implantation to control B diffusion in Si

M. Canino, M. Xu, G. Regula, 2009 .