D. Pal

发表

Lattice mismatch and surface morphology studies of InxGa1−xAs epilayers grown on GaAs substrates

D. N. Bose, S. K. Agarwal, M. Singh, 1998 .

Transmission electron microscopy and X-ray diffraction studies of quantum wells

D. N. Bose, S. Halder, P. Banerji, 1999 .

Photoluminescence and photoconductivity in hydrogen-passivated ZnTe

D. N. Bose, S. Bhunia, D. Pal, 1998 .

Photoconductivity and photoluminescence studies in copper diffused InP

D. N. Bose, D. Pal, 1996 .

Line shape, linewidth and configuration coordinate diagram of the Cu band (1.21 eV) in InP

D. N. Bose, D. Pal, 1995 .

Photoconductivity and photoluminescence of Cu diffused p-InP

D. N. Bose, D. Pal, 1995, Seventh International Conference on Indium Phosphide and Related Materials.

Liquid phase epitaxy growth of InGaAs with rare-earth gettering: Characterization and deep level transient spectroscopy studies

D. N. Bose, D. Pal, A. Kumar, 1995 .

Double crystal X-Ray diffraction studies on chloride-VPE grown GaxIn1 − xAs layers with different Ga-TO-In ratio

D. N. Bose, S. K. Agarwal, R. Pal, 1997 .

Deep‐level transient spectroscopy study in gettered liquid phase epitaxy grown In0.53Ga0.47As

D. N. Bose, D. Pal, 1995 .

Reply to ‘‘Comments on ‘Line shape, line width, and configuration coordinate diagram of the Cu band (1.21 eV) in InP’ ’’ [J. Appl. Phys. 80, 1937 (1996)]

D. N. Bose, D. Pal, 1996 .