D. Johnstone

发表

Effects of lattice mismatch and thermal annealing on deep traps and interface states in Ga0.92In0.08As(n+)/GaAs(p) heterojunctions

C. E. Stutz, K. Evans, Z. C. Huang, 1993 .

Energy and Depth Distributions of Interface States and bulk Traps and their Electronic Effects in GalnAs/GaAs Heterojuntions

C. E. Stutz, K. Evans, Z. C. Huang, 1991 .

Control of surface states in GaSb/AlxGa1−xAsySb1−y/GaxIn1−xSb/AlxGa1−xAsySb1−y quantum well structures

G. Turner, Y. Yeo, R. Hengehold, 1999 .

Defects and localized states in MBE-grown GaAs1−x N x solid solutions prepared by molecular-beam epitaxy

N. B. Smirnov, A. Polyakov, A. Govorkov, 2003 .

Studies of deep centers in dilute GaAsN and InGaAsN films grown by molecular beam epitaxy

N. B. Smirnov, Arif Khan, A. Polyakov, 2002 .

Interface properties and deep levels in InGaAsN/GaAs and GaAsN/GaAs heterojunctions

N. B. Smirnov, Arif Khan, A. Polyakov, 2002 .

Surface band bending in as-grown and plasma-treated n-type GaN films using surface potential electric force microscopy

H. Morkoç, S. Doğan, M. Reshchikov, 2004 .

Photo-induced current transient spectroscopy and photoluminescence studies of defects in AgGa0.6In0.4Se2

P. Bhattacharya, A. Burger, Yunlong Cui, 2013 .

Thermal stability of electron traps in GaN grown by metalorganic chemical vapor deposition

H. Morkoç, S. Doğan, Y. Moon, 2004 .

Growth and surface analysis of SiO2 on 4H-SiC for MOS devices

C. B. Overton, Subba Ramaiah Kodigala, S. Chattopadhyay, 2015 .

Deep level capture barrier in molecular beam epitaxial grown AlAsySb1−y measured by isothermal capacitance transient spectroscopy

G. Turner, Y. Yeo, R. Hengehold, 1997 .

Growth and characterization of SiC epitaxial layers on Si- and C-face 4H SiC substrates by chemical-vapor deposition

T. Chow, J. Kim, I. Bhat, 2005 .

A study of GaN regrowth on the micro‐facetted GaN template formed by in‐situ thermal etching

H. Morkoç, S. Doğan, Y. Moon, 2005 .

Determination of the carrier concentration in InGaAsN∕GaAs single quantum wells using Raman scattering

M. O. Manasreh, D. Friedman, S. Doğan, 2004 .

Gallium desorption kinetics on (0001) GaN surface during the growth of GaN by molecular-beam epitaxy

H. Morkoç, J. Xie, Y. Moon, 2006 .

Characterization of dark current in Ge-on-Si photodiodes

J. Hoyt, N. DiLello, D. Johnstone, 2012 .

Defects in 6LiInSe2 neutron detector investigated by photo-induced current transient spectroscopy and photoluminescence

P. Bhattacharya, E. Tupitsyn, E. Rowe, 2013 .

Comparison of deep levels in GaN grown by MBE, MOCVD, and HVPE

Hadis Morkoc, Feng Yun, Daniel Johnstone, 2005, SPIE OPTO.

Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence

P. Bhattacharya, A. Burger, Yunlong Cui, 2009 .

Acceptor levels in GaSe:In crystals investigated by deep-level transient spectroscopy and photoluminescence

Yunlong Cui, Arnold Burger, Krishna C. Mandal, 2008 .

Optical properties and defects in GaAsN and InGaAsN films and quantum well structures

N. B. Smirnov, Arif Khan, A. Polyakov, 2002 .

Influence of arsenic doping on the electrical properties of GaN epitaxial layers grown by MOCVD

L. Guido, Y. Yeo, R. Hengehold, 2000, 2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046).

Electrical activation studies of GaN implanted with Si from low to high dose

James A. Fellows, D. K. Johnstone, Y. Yeo, 2002 .

Characterization of HgCdTe Diodes on Si Substrates Using Temperature-Dependent Current-Voltage Measurements and Deep Level Transient Spectroscopy

M. Carmody, T. Golding, J. Dinan, 2007 .

Effect of C∕Si ratio on deep levels in epitaxial 4H–SiC

T. Chow, J. Kim, I. Bhat, 2006 .

GaN deep-level capture barriers

Mohamad Ahoujja, Louis J. Guido, Daniel K. Johnstone, 2001, SPIE OPTO.

Studies of 4H-SiC wafer and its epitaxial layers grown by chemical vapor deposition

J. Kim, E. Schubert, K. Ramaiah, 2007 .

Surface spatial profiles of defects in GaN

H. Morkoc, J. Xie, Y. Fu, 2006, SPIE OPTO.

The effect of hydrogen etching on 6H-SiC studied by temperature-dependent current-voltage and atomic force microscopy

H. Morkoç, B. Ganguly, S. Doğan, 2004 .

Improvement of n-GaN Schottky diode rectifying characteristics using KOH etching

H. Morkoç, S. Doğan, R. Molnar, 2003 .

Effect of n+-GaN subcontact layer on 4H–SiC high-power photoconductive switch

H. Morkoç, S. Doğan, Y. Moon, 2005 .