P. Ribas

Strain relief study concerning the InxGa1−xAs/GaAs (0.07

R. Park, V. Krishnamoorthy, P. Ribas, 1991 .

Electron and γ irradiation effects in InP assessed by photoluminescence

P. Souza, P. Ribas, J. V. Bellini, 1996 .

Device quality In0.4Ga0.6As grown on GaAs by molecular beam epitaxy

R. Park, V. Krishnamoorthy, P. Ribas, 1990 .

Low dark current, planar In0.4Ga0.6As p‐i‐n photodiode prepared by molecular beam epitaxy growth on GaAs

Yirong Lin, Y. Tzeng, Shengshi Li, 1991 .