P. Lawaetz

发表

Effective Charges and Ionicity

P. Lawaetz, 1971 .

New Analysis of Direct Exciton Transitions: Application to GaP

D. Sell, P. Lawaetz, 1971 .

The Relation Between One-Phonon and Resonant Indirect Two-Phonon Scattering Rates

E. Kane, D. Sell, P. Lawaetz, 1974 .

The Effect of Band Warping on the Anisotropy of Hot-Hole Drift Velocity in Ge

C. Canali, G. Ottaviani, L. Reggiani, 1974 .

On the S-Shaped Characteristic of Semiconductors at Low Temperature

W. G. Proctor, R. Triboulet, Y. Marfaing, 1982 .

Valence-Band Parameters in Cubic Semiconductors

P. Lawaetz, P. Lawaetz, 1971 .

Internal Strain in Zincblende and Wurtzite Crystals

P. Lawaetz, 1973 .

On the interpretation of the observed hole mass shift with Uniaxial stress in silicon

I. Balslev, I. Balslev, P. Lawaetz, 1965 .

Temperature Dependence of Acoustic Phonon Limited Low Field Mobility of Holes in Germanium

P. Lawaetz, 1965 .

Piezoelectricity of the Cuprous Halides

P. Lawaetz, 1974, June 1.