N. Tanaka

发表

GHz-Band Surface Acoustic Wave Devices Using the Second Leaky Mode on LiTaO3 and LiNbO3

K. Shibata, H. Okano, T. Usuki, 1997 .

Preparation of aluminum nitride thin films by reactive sputtering and their applications to GHz‐band surface acoustic wave devices

K. Shibata, S. Nakano, H. Okano, 1994 .

Photochemical vapor deposition of hydrogenated amorphous silicon films from disilane and trisilane using a low pressure mercury lamp

A. Matsuda, K. Kumata, Y. Toyoshima, 1986 .

Characteristics of Surface Acoustic Wave on AlN Thin Films

H. Okano, T. Usuki, Y. Kobayashi, 1995 .

GHz-Band Surface Acoustic Wave Devices Using Aluminum Nitride Thin Films Deposited by Electron Cyclotron Resonance Dual Ion-Beam Sputtering

H. Okano, N. Tanaka, Shoichi Nakano Shoichi Nakano, 1993 .

Silicon dioxide thin films prepared by ArF excimer laser chemical vapor deposition from silicon tetraacetate

S. Yoshikado, K. Yukimura, T. Maruyama, 1998 .

Epitaxial AlN Thin Films Grown on α-Al2O3 Substrates by ECR Dual Ion Beam Sputtering

H. Okano, Masami Kobayashi, T. Usuki, 1995 .

Preparation of Aluminum Nitride Epitaxial Films by Electron Cyclotron Resonance Dual-Ion-Beam Sputtering

H. Okano, N. Tanaka, Kenichi Shibata Kenichi Shibata, 1994 .

1.9-GHz-Band Surface Acoustic Wave Device Using Second Leaky Mode on LiTaO3

K. Shibata, H. Okano, T. Usuki, 1996 .

Defect Formation in (0001)- and (112̄0)-Oriented 4H-SiC Crystals P+-Implanted at Room Temperature

H. Matsunami, T. Kimoto, Y. Negoro, 2004 .