V. Eu

发表

Does the two-dimensional electron gas effect contribute to high-frequency and high-speed performance of field-effect transistors?

Milton Feng, C. L. Lau, V. K. Eu, 1990 .

HIGH VOLUME PRODUCTION GROWTH OF GaAs ON SILICON SUBSTRATES.

C. Ito, M. Feng, H. Kim, 1986 .

Study of cr, si and mn distribution in semi-insulating gaas after annealing with and without SiO2 in an H2-AS4 atmosphere

W. B. Henderson, M. Feng, V. Eu, 1981 .

Study of electrical and chemical profiles of Si implanted in semi-insulating GaAs substrate annealed under SiO2 and capless

Milton Feng, V. K. Eu, M. Feng, 1981 .

Correlation between chemical and electrical profiles in Si+, Se+ and S+ implanted bulk and epitaxial GaAs

W. B. Henderson, M. Feng, V. Eu, 1982 .

Impurity induced layer disordering of Si implanted AlxGa1−xAs‐GaAs quantum‐well heterostructures: Layer disordering via diffusion from extrinsic dislocation loops

N. Holonyak, R. Kaliski, M. Feng, 1987 .

Ultrahigh frequency operation of ion-implanted GaAs metal-semiconductor field-effect transistors

H. Kanber, Milton Feng, E. T. Watkins, 1984 .

Si‐doped GaAs by SiCl4‐AsCl3 liquid solution in AsCl3/GaAs‐Ga/H2 chemical vapor deposition system

J. M. Whelan, M. Feng, H. Kim, 1981 .

Cr profiles in semi-insulating GaAs after annealing with and without SiO2 encapsulants in a H2-As4 atmosphere

Milton Feng, J. M. Whelan, W. B. Henderson, 1980 .

Si‐implanted and disordered stripe‐geometry AlxGa1−xAs‐GaAs quantum well lasers

N. Holonyak, M. Feng, P. Gavrilovic, 1985 .

Low‐noise GaAs field‐effect transistor made by molecular beam epitaxy

M. Feng, V. Eu, M. Braunstein, 1982 .

Low noise GaAs metal‐semiconductor field‐effect transistor made by ion implantation

H. Kanber, Milton Feng, J. M. Schellenberg, 1982 .

Multilevel Si doping in GaAs using a single AsCl3:SiCl4 doping source

J. M. Whelan, M. Feng, V. Eu, 1982 .

Heavily doped p‐GaAs grown by low‐pressure organometallic vapor phase epitaxy using liquid CCl4

P. Wright, Z. Lu, L. W. Yang, 1992 .

High-efficiency GaAs power MESFETs prepared by ion implantation

H. Kanber, Milton Feng, M. Siracusa, 1982 .

GaAs MESFET's made by ion implantation into MOCVD Buffer layers

W. B. Henderson, M. Feng, V. Eu, 1984, IEEE Electron Device Letters.

Growth and characterization of Si doped vapor phase epitaxial GaAs for mesfet

J. M. Whelan, V. Eu, T. Zielinski, 1982 .