Timothy Ciarkowski

Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE

P. Fay, R. McCarthy, C. Youtsey, 2019, Materials.

Electrical characterization of RuOx/n-GaN Schottky diodes formed by oxidizing ruthenium thin-films in normal laboratory air

N. Allen, A. Chakraborty, L. Guido, 2020 .

GaInN/GaN solar cells made without p-type material using oxidized Ni/Au Schottky electrodes

R. Welser, N. Allen, O. Laboutin, 2016 .

Characterization of inhomogeneous Ni/GaN Schottky diode with a modified log-normal distribution of barrier heights

N. Allen, L. Guido, E. Carlson, 2019, Semiconductor Science and Technology.

GaInN/GaN - Ni/Au transparent conducting oxide Schottky barrier solar cells

R. Welser, V. Elarde, N. Allen, 2014, 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).

Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching

Patrick Fay, Kamran Forghani, Andy Xie, 2017 .