Hirotaka Watanabe

发表

Impact of high-temperature implantation of Mg ions into GaN

H. Amano, S. Chichibu, S. Nitta, 2020, Japanese Journal of Applied Physics.

Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

Kevin J. Chen, H. Amano, S. Chichibu, 2020, physica status solidi (b).

Impact of gate electrode formation process on Al2O3/GaN interface properties and channel mobility

N. Taoka, H. Amano, M. Shimizu, 2021, Applied Physics Express.

Laser slice thinning of GaN-on-GaN high electron mobility transistors

A. Wakejima, H. Amano, R. Sugiura, 2022, Scientific Reports.

Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach

Kevin J. Chen, H. Amano, Tao Chen, 2021 .

Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes

Kevin J. Chen, H. Amano, Tao Chen, 2020, 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Experimental demonstration of GaN IMPATT diode at X-band

H. Amano, M. Arai, S. Nitta, 2021 .

Syntheses and Characterization of New Nickel Coordination Polymers with 4,4′-Dipyridylsulfide. Dynamic Rearrangements of One-Dimensional Chains Responding to External Stimuli: Temperature Variation and Guest Releases/Re-Inclusions

Naoko Nishina, M. Kondo, M. Miyazawa, 2010, International journal of molecular sciences.

Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg

H. Amano, S. Nitta, Y. Honda, 2021, Applied Physics Letters.

Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process

Kevin J. Chen, H. Amano, Tao Chen, 2022, Applied Physics Letters.

Optical properties of neodymium ions in nanoscale regions of gallium nitride: erratum

T. Ohshima, A. Greentree, H. Amano, 2020, Optical Materials Express.

Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy

H. Amano, S. Nitta, N. Fujimoto, 2022, Journal of Applied Physics.

Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars

T. Ohshima, A. Greentree, H. Amano, 2022, Scientific reports.

Smart-cut-like laser slicing of GaN substrate using its own nitrogen

H. Amano, R. Sugiura, A. Tanaka, 2021, Scientific Reports.

Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching

H. Amano, S. Nitta, A. Tanaka, 2021 .

Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy

H. Amano, S. Nitta, N. Fujimoto, 2021, Applied Physics Letters.

Electrical properties and structural defects of p-type GaN layers grown by halide vapor phase epitaxy

H. Amano, S. Nitta, N. Fujimoto, 2021, Journal of Crystal Growth.

Multi-point Scanning Two-photon Excitation Microscopy by Utilizing a High-peak-power 1042-nm Laser

T. Nemoto, T. Murata, M. Hasebe, 2015, Analytical Sciences.

Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures

T. Ohshima, H. Amano, H. Okada, 2020 .

“Regrowth-free” fabrication of high-current-gain AlGaN/GaN heterojunction bipolar transistor with N-p-n configuration

H. Amano, S. Nitta, A. Tanaka, 2022, Applied Physics Express.

Liquid-Phase Molecular Layer Deposition: Potential Applications to Multi-Dye Sensitization and Cancer Therapy

T. Yoshimura, Hirotaka Watanabe, C. Yoshino, 2011 .

Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz

H. Amano, M. Arai, A. Tanaka, 2023, IEEE Electron Device Letters.

Surface Kinetics in Halide Vapor Phase Epitaxial Growth of Gan Layers on Gan (0001) Freestanding Substrates

H. Amano, S. Nitta, Y. Honda, 2022, SSRN Electronic Journal.

Electron lifetime and diffusion coefficient in dopant-free p-type distributed polarization doped AlGaN

Y. Honda, Hirotaka Watanabe, S. Kawasaki, 2023, Applied Physics Letters.

Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate

S. Nitta, Y. Honda, Y. Ando, 2023, Journal of Crystal Growth.