A. Syrkin

发表

First all‐HVPE grown InGaN/InGaN MQW LED structures for 460‐510 nm

M. Reed, Z. Liliental-Weber, H. Shen, 2008 .

Comparative investigation of ECR-RIE patterns on Si and C faces of 6H-SiC using a gas mixture

J. Bluet, R. Bonnot, J. Camassel, 1997 .

Deep centers and blue-green electroluminescence in 4H-SiC

A. Lebedev, M. Anikin, V. Chelnokov, 1993 .

InN-based layers grown by modified HVPE

N. M. Shmidt, C. Collins, V. Davydov, 2006 .

Thick AlN layers grown by HVPE on sapphire substrates

C. Collins, M. Wraback, A. Usikov, 2005 .

Surface barrier height in metal-n-6H-SiC structures

A. Lebedev, V. Chelnokov, M. Rastegaeva, 1995 .

Surface barrier height in metal-SiC structures of 6H, 4H and 3C polytypes

J. Bluet, T. Bretagnon, A. Lebedev, 1997 .

Ohmic Contacts to Silicon Carbide Devices

M. Anikin, M. Rastegaeva, A. Syrkin, 1992 .

High temperature electronics using SiC: actual situation and unsolved problems

V. Chelnokov, A. Syrkin, 1997 .

Breakdown in Silicon Carbide pn Junctions

M. Anikin, A. Syrkin, M. Levinstein, 1992 .

The Schottky Parameter Test for Combined Diffusion Welded and Sputter Large Area Contacts

T. Rang, V. Dmitriev, A. Syrkin, 2007 .

High-temperature Au-SiC-6H Schottky diodes

S. N. Pyatko, A. Lebedev, A. Strel'chuk, 1991 .

Recent results on AlN growth by HVPE and fabrication of free standing AlN wafers

A. Usikov, V. Ivantsov, V. Dmitriev, 2006 .

Power silicon carbide devices based on Lely grown substrates

N.S. Savkina, M.G. Rastegaeva, A.A. Lebedev, 1995, Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95.

n-InGaN /p-GaN single heterostructure light emitting diode with p-side down

Michael Wraback, Vladimir Dmitriev, A. Usikov, 2008 .

Benefits of negative polarization charge inn-InGaN onp-GaN single heterostructure light emitting diode withp-side down

M. Reed, M. Wraback, A. Usikov, 2009 .

Accumulation of Background Impurities in Hydride Vapor Phase Epitaxy Grown GaN Layers

A. Usikov, A. Volkova, V. Ivantsov, 2013 .

Semi‐polar nitride surfaces and heterostructures

M. Kisin, A. Strittmatter, N. Johnson, 2011 .

Electrical and optical properties of thick highly doped p‐type GaN layers grown by HVPE

A. Davydov, S. Sundaresan, S. Jeliazkov, 2008 .

Morphological, electrical, and optical properties of InN grown by hydride

M. Basavaraj, V. Kuryatkov, M. Holtz, 2006 .

Electrical characteristics of tungsten-contacts to 6HSiC at temperatures between 300 and 950 K

M. Rastegaeva, A. Syrkin, 1992 .

Fabrication of SiC epitaxial structures for devices by the method of sublimation in an open system

S. N. Pyatko, A. Lebedev, A. Strel'chuk, 1992 .

Influence of growth conditions on the structural perfection of β-SiC epitaxial layers fabricated on 6H-SiC substrates by vacuum sublimation

A. Tregubova, V. Chelnokov, A. Andreev, 1997 .

Liquid-Phase Epitaxial Growth of Heavily Doped Al p-Type Contact Layers for SiC Devices and Resulting Ohmic Contacts

D. Bauman, V. Dmitriev, J. Crofton, 2002 .

Overview of SiC power electronics

V. E. Chelnokov, V. A. Dmitriev, V. Dmitriev, 1997 .

Large area GaN and AlN template substrates fabricated by HVPE

A. Usikov, A. Volkova, V. Ivantsov, 2009 .

Luminescence determination of donor concentration in n-type 6H-SiC

J. Bluet, A. Syrkin, N. V. D’yakonova, 1997 .

Effect of boron diffusion on the high‐voltage behavior of 6H‐SiC p+nn+ structures

J. Chante, M. Locatelli, A. Lebedev, 1996 .

InN Nano Rods and Epitaxial Layers Grown by HVPE on Sapphire Substrates and GaN, AlGaN, AlN Templates

C. Collins, V. Kuryatkov, S. Nikishin, 2005 .

Reactive ion etching of 6H-SiC in an ECR plasma of CF4-O2 mixtures using both Ni and Al masks

J. Bluet, R. Bonnot, J. Camassel, 1997 .