E. I. Shek

发表

Effect of Additional Implantation with Oxygen Ions on the Dislocation-related Luminescence in Silicon-containing Oxygen Precipitates

N. Sobolev, A. Kalyadin, K. F. Shtel’makh, 2022, Semiconductors.

Silicon Light-Emitting Diodes with Luminescence from (113) Defects

N. Sobolev, P. Aruev, V. Zabrodskii, 2020 .

Temperature dependences of the photoluminescence intensities of centers in silicon implanted with erbium and oxygen ions

N. Sobolev, A. Kalyadin, K. F. Shtel’makh, 2015 .

Light-emitting Si:Er structures produced by molecular-beam epitaxy: High-resolution photoluminescence spectroscopy

D. I. Kryzhkov, N. Sobolev, D. Denisov, 2005 .

MBE-grown Si: Er light-emitting structures: Effect of epitaxial growth conditions on impurity concentration and photoluminescence

V. Ustinov, N. Sobolev, G. Cirlin, 2005 .

Effect of the postimplantation-annealing temperature on the properties of silicon light-emitting diodes fabricated through boron ion implantation into n-Si

N. Sobolev, V. Vdovin, A. M. Emel’yanov, 2004 .

Influence of Extended Structural Defects on the Characteristics of Electroluminescence in Efficient Silicon Light-Emitting Diodes

N. Sobolev, V. Vdovin, A. M. Emel’yanov, 2003 .

Impurity centers in silicon doped with rare-earth impurities of dysprosium, holmium, erbium, and ytterbium

V. V. Emtsev, J. Michel, L. Kimerling, 1999 .

Impurity effects in silicon implanted with rare-earth ions,

V. V. Emtsev, J. Michel, L. Kimerling, 1999 .

Electroluminescent properties of strained p-Si LEDs

N. Sobolev, E. Yakimov, A. M. Emel’yanov, 2005 .

Effect of the annealing temperature on the low-temperature photoluminescence in Si:Er light-emitting structures grown by molecular-beam epitaxy

N. Sobolev, D. Denisov, B. Andreev, 2013 .

Effects of oxygen coimplantation on the formation of donor centers in erbium-implanted silicon

V. V. Emtsev, L. Kimerling, N. Sobolev, 2001 .

Oxygen and Erbium related donor centers in Czochralski grown silicon implanted with erbium

V. V. Emtsev, J. Michel, L. Kimerling, 1999 .

A comparative study of donor formation in dysprosium, holmium, and erbium implanted silicon

V. V. Emtsev, N. Sobolev, D. Poloskin, 1998 .

Shallow Donor Centers in Erbium-Implanted Silicon Subjected to High-Temperature Annealing

V. V. Emtsev, N. Sobolev, D. Poloskin, 1996 .

Silicon LEDs emitting in the band-to-band transition region: Effect of temperature and current strength

N. Sobolev, A. M. Emel’yanov, E. I. Shek, 2004 .

Erbium-doped silicon grown by molecular beam epitaxy

D. I. Kryzhkov, N. Sobolev, V. Vdovin, 2004, Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..

Influence of Point Defects on Defect Formation in Si:Er

V. V. Emtsev, M. I. Makovijchuk, N. Sobolev, 1995 .

Photoluminescence in silicon implanted with erbium ions at an elevated temperature

N. Sobolev, I. Serenkov, V. Sakharov, 2011 .

Formation of donor centers upon annealing of dysprosium-and holmium-implanted silicon

N. Sobolev, O. Aleksandrov, E. I. Shek, 1998 .

Formation Of Er-Related Donor Centers During Postimplantation Annealing Of Si:Er

N. Sobolev, O. Aleksandrov, E. I. Shek, 1996 .

Electrically active centers formed in silicon during the high-temperature diffusion of boron and aluminum

N. Sobolev, D. Poloskin, A. Loshachenko, 2013 .

Photoluminescence associated with {113} defects in oxygen‐implanted silicon

N. Sobolev, V. Vdovin, A. Gutakovskii, 2017 .

Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film

N. Sobolev, I. Serenkov, V. Sakharov, 2019, Semiconductors.

Electrical Characterization and Defect-Related Luminescence in Oxygen Implanted Silicon

O. Vyvenko, N. Sobolev, D. Danilov, 2015 .

N. Sobolev, B. Ber, A. M. Emel’yanov, 2007 .

Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions

N. Sobolev, O. Aleksandrov, I. Serenkov, 2019, Semiconductors.

Electroluminescence properties of LEDs based on electron-irradiated p-Si

N. Sobolev, P. Aruev, V. V. Zabrodskiy, 2016 .

Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence

Deren Yang, N. Sobolev, V. Vdovin, 2018 .

Photoluminescence and structural defects in erbium-implanted silicon annealed at high temperature

T. Yugova, N. Sobolev, V. Vdovin, 1998 .

Si:Si LEDs with room-temperature dislocation-related luminescence

N. Sobolev, P. Aruev, A. Mikhaylov, 2016 .

Distribution of D1 dislocation luminescence centers in Si+-implanted silicon and the photoluminescence model

A. I. Bobrov, D. Korolev, A. Belov, 2015 .

Effect of ion doping on the dislocation-related photoluminescence in Si+-implanted silicon

A. I. Bobrov, D. Korolev, D. Tetelbaum, 2014 .

Photoluminescence in silicon implanted with silicon ions at amorphizing doses

N. Sobolev, I. Serenkov, V. Sakharov, 2011 .

N. Sobolev, I. Serenkov, V. Sakharov, 2007 .

Localization of dislocation‐related luminescence centers in self‐ion implanted silicon and effect of additional boron ion doping

A. I. Bobrov, N. Sobolev, D. Korolev, 2015 .

Extended Defects in O+-Implanted Si Layers and Their Luminescence

N. Sobolev, V. Vdovin, A. Gutakovskii, 2021, Crystallography Reports.

Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions

N. Sobolev, P. Aruev, V. Zabrodskii, 2016 .

Extended structural defects and their influence on the electroluminescence in efficient Si light-emitting diodes

N. Sobolev, V. Vdovin, A. M. Emel’yanov, 2003 .

Influence of measurement temperature on the luminescence properties of (113) defects in oxygen-implanted silicon

N. Sobolev, A. Kalyadin, K. F. Shtel’makh, 2017 .

Defect Structure of GaAs Layers Implanted with Nitrogen Ions

V. M. Mikushkin, N. Sobolev, V. Vdovin, 2018, Technical Physics Letters.

The electrically active centers in oxygen-implanted silicon

O. Vyvenko, N. Sobolev, A. Loshachenko, 2013 .