M. Shaleev

发表

On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells

A. N. Yablonsky, R. Zhukavin, D. Yurasov, 2016 .

Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

A. I. Bobrov, Z. F. Krasilnik, M. Drozdov, 2015 .

FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES Study of the Transition of the Epitaxial Ge Film from LayertoLayer to ThreeDimensional Growth in Heterostructures with Strained SiGe Sublayers

A. Novikov, D. Yurasov, M. Shaleev, 2010 .

Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures

P. Yunin, M. Shaleev, D. Yurasov, 2016 .

MOCVD Growth of InGaAs/GaAs/AlGaAs Laser Structures with Quantum Wells on Ge/Si Substrates

A. Dubinov, P. Yunin, V. Aleshkin, 2018, Crystals.

Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates

M. Drozdov, P. Yunin, D. Yurasov, 2015 .

Impact of Ge deposition temperature on parameters of c-Si solar cells with surface texture formed by etching of Si using SiGe islands as a mask

Y. Kurokawa, N. Usami, K. Gotoh, 2020 .