D. Aliprantis

发表

The Effect of Germanium Doping on the Production of Carbon–Related Defects in Electron-Irradiated Czochralski Silicon

V. V. Emtsev, H. Ohyama, C. A. Londos, 2009 .

Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si

D. Caliste, P. Pochet, A. Chroneos, 2013 .

IR studies of oxygen-related and carbon-related defects in Sn-doped silicon

H. Ohyama, C. A. Londos, E. Sgourou, 2011 .

The CO V defect in neutron irradiated silicon: An infrared spectroscopy study

E. Sgourou, A. Chroneos, C. A. Londos, 2018 .

IR studies of oxygen–vacancy defects in electron-irradiated Ge-doped Si

V. V. Emtsev, H. Ohyama, C. A. Londos, 2007 .

Formation and evolution of oxygen-vacancy clusters in lead and tin doped silicon

P. Pochet, A. Chroneos, C. A. Londos, 2012 .

Infrared absorption spectra of defects in carbon doped neutron-irradiated Si

C. A. Londos, A. Misiuk, G. D. Antonaras, 2007 .

Experimental and theoretical study of the C4 defect in neutron irradiated silicon

C. A. Londos, T. Angeletos, G. D. Antonaras, 2018 .