M. Prujszczyk

发表

Properties of Si:Cr Annealed under Enhanced Stress Conditions

B. Surma, L. Chow, A. Misiuk, 2007 .

Properties of Si:V Annealed under Enhanced Hydrostatic Pressure

R. Vanfleet, L. Chow, W. Wierzchowski, 2011 .

SILICON BASED MATERIALS FOR APPLICATION IN SPINTRONICS

L. Chow, A. Misiuk, J. Bąk-Misiuk, 2007 .

MicroRaman studies of implantation‐induced amorphization of Si and subsequent regrowth under high‐pressure and high‐temperature treatment

P. Schäfer, Y. Azhniuk, D. Zahn, 2010 .

Out-diffusion of hydrogen from hydrogen plasma-processed oxygen-implanted silicon

A. Ulyashin, I. Tyschenko, A. Misiuk, 2012 .

Stress dependent structure of annealed nitrogen-doped Cz-Si

Deren Yang, B. Surma, A. Misiuk, 2006 .

Influence of high pressure annealing on electrical properties of surface layer of neutron irradiated or germanium-doped Czochralski-grown silicon

Deren Yang, I. Antonova, W. Jung, 2005 .

Stress-dependent transformation of interstitial oxygen in processed Ge-doped Cz-Si

Deren Yang, W. Jung, C. A. Londos, 2006 .

Defects in Czochralski-grown Si–Ge annealed under high hydrostatic pressure

B. Surma, W. Graeff, W. Wierzchowski, 2009 .

Effect of annealing under stress on defect structure of Si-Ge

N. Abrosimov, B. Surma, W. Graeff, 2008 .

Effect of high-pressure high-temperature treatment on neutron-irradiation-induced defects in Czochralski silicon

Jadwiga Bak-Misiuk, Andrzej Misiuk, Charalambos A. Londos, 2001, International Conference on Solid State Crystals.

Thermally induced defects in silicon irradiated with fast neutrons

W. Graeff, W. Wierzchowski, C. A. Londos, 2009 .

Revealing the defects in electron-irradiated Czochralski silicon

J. Felba, W. Jung, W. Wierzchowski, 2010 .

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γ Irradiation and High Temperature-High Pressure Treatment

Deren Yang, B. Surma, W. Graeff, 2008 .

Revealing the radiation-induced effects in silicon by processing at enhanced temperatures–pressures

I. Kovačević, B. Surma, P. Vagovič, 2007 .

Pressure-assisted generation of thermal donors in doped Cz-Si

A. Misiuk, P. Romanowski, J. Bąk-Misiuk, 2013 .

Synchrotron topographic and photoluminescence investigations of porous layer in HT‐HP treated silicon implanted with deuterium ions

B. Surma, W. Graeff, I. Antonova, 2005 .

Infrared and photoluminescence studies on silicon oxide formation in oxygen-implanted silicon annealed under enhanced pressure

B. Surma, I. Antonova, G. Gawlik, 2001 .

Diffusion profiles and magnetic properties of Mn-implanted silicon after thermal annealing

R. Vanfleet, E. Barco, L. Chow, 2008 .