C. Tuppen

发表

THE 698 meV OPTICAL BAND IN MBE SILICON

E. C. Lightowlers, G. Davies, C. Gibbings, 1989 .

Photoluminescence characterization of molecular beam epitaxial silicon

S. Davey, E. Kasper, F. Schäffler, 1989 .

Edge effects and image contrast in scanning Auger microscopy: A theory/experiment comparison

M. Prutton, C. Tuppen, M. Gomati, 1988 .

Energy and Telecommunications — An Environmental Impact Analysis

C. G. Tuppen, C. Tuppen, C.G. Tuppen, 1992 .

The growth and characterization of nominally undoped Al1−xInxAs grown by molecular beam epitaxy

B. Wakefield, G. Davies, T. Kerr, 1984 .

Misfit dislocations in annealed Si1−xGex/Si heterostructures

C. Gibbings, C. Tuppen, 1989 .

Growth of high quality indium phosphide from metalorganic sources by molecular beam epitaxy

S. Davey, B. Wakefield, G. Davies, 1988 .

Effects of implantation temperature on the properties of buried oxide layers in silicon formed by oxygen ion implantation

R. P. Arrowsmith, P. Hemment, M. Taylor, 1984 .

The kinetics of dislocation glide in SiGe alloy layers

C. Gibbings, C. Tuppen, 1990 .

Relaxation of Si/Si1-xGex Strained Layer Structures

M. H. Lyons, S. Davey, M. Halliwell, 1989 .

A quantitative analysis of strain relaxation by misfit dislocation glide in Si1−xGex/Si heterostructures

C. Gibbings, C. Tuppen, 1990 .

Dislocation Glide Velocity in N- and P-Doped Si 1−x Ge x Layers on Si (001)

C. Gibbings, V. Higgs, C. Tuppen, 1991 .

Asymmetric strain distributions resulting from deliberately induced misfit dislocations

M. Halliwell, C. Gibbings, C. Tuppen, 1990 .

Misfit dislocation multiplication processes in Si1−xGex alloys for x<0.15

S. Roberts, C. Gibbings, C. Tuppen, 1990 .

Dislocation nucleation and propagation in Si0.95Ge0.05 layers on silicon

C. Gibbings, C. Tuppen, M. Hockly, 1989 .

An Auger Electron Spectroscopy (AES) Investigation into the Effect Annealing on the Phase Distribution of Ion Implanted Oxygen in Silicon

G. J. Davies, R. Heckingbottom, M. Taylor, 1983 .

Relaxation Processes in Si / Si1 − x Ge x Strained Layer Superlattices A Study by Raman Spectroscopy and X‐Ray Diffractometry

M. H. Lyons, S. Davey, M. Halliwell, 1989 .

Selective polycrystalline and epitaxial growth by silicon molecular beam epitaxy

J. Davis, C. Gibbings, C. Tuppen, 1990 .

Estimation of percentage relaxation in Si/Si1-xGex strained-layer superlattices

M. H. Lyons, S. Davey, M. Halliwell, 1989 .

Raman spectroscopy of low-dimensional structures

K. Ploog, Gerhard Fasol, J. White, 1990 .

Optical etalon effects and electronic structure in silicon-germanium 4 monolayer: 4 monolayer strained layer superlattices

A. C. Churchill, M. E. Jones, P. Klipstein, 1991 .

LETTER TO THE EDITOR: Characterisation of Si/Si1-xGex superlattices by anodic dissolution

S. Casey, C. Gibbings, C. Tuppen, 1990 .

Boron redistribution in doping superlattices grown by silicon molecular beam epitaxy using B2O3

M. Denhoff, J. McCaffrey, D. Houghton, 1988 .

Oxygen incorporation in molecular‐beam epitaxial silicon doped using a boric oxide source

D. Houghton, T. Jackman, K. Prior, 1988 .

The structural stability of uncapped versus buried Si1−xGex strained layers through high temperature processing

M. H. Lyons, D. Houghton, M. Halliwell, 1989 .

Low Threading Dislocation Densities in Thick, Relaxed Si 1−x Ge x Buffer Layers

C. Gibbings, C. Tuppen, M. Hockly, 1991 .

The effects of misfit dislocation nucleation and propagation on Si/Si1-xGex critical thickness values

C. Gibbings, C. Tuppen, M. Hockly, 1989 .

The importance of neutral base recombination in compromising the gain of Si/SiGe heterojunction bipolar transistors

Z. A. Shafi, I. Post, P. Ashburn, 1991 .

Impurity - Dislocation Interactions in MBE Silicon

C. Gibbings, C. Tuppen, B. Hamilton, 1988 .

Equilibrium critical thickness for Si1−xGex strained layers on (100) Si

M. H. Lyons, D. Houghton, M. Halliwell, 1990 .

Mismatch Dislocation Nucleation and Propagation in Si/Si 1−x Ge x Heterostructures

C. Gibbings, C. Tuppen, M. Hockly, 1988 .

High spatial resolution Auger linescans across heterogeneous chemical edges by Monte Carlo calculation

G. J. Davies, C. Tuppen, 1985 .